1PMT5915A/TR13 Allicdata Electronics
Allicdata Part #:

1PMT5915A/TR13-ND

Manufacturer Part#:

1PMT5915A/TR13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 3.9V 3W DO216AA
More Detail: Zener Diode 3.9V 3W ±10% Surface Mount DO-216AA
DataSheet: 1PMT5915A/TR13 datasheet1PMT5915A/TR13 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 3.9V
Tolerance: ±10%
Power - Max: 3W
Impedance (Max) (Zzt): 7.5 Ohms
Current - Reverse Leakage @ Vr: 25µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: DO-216AA
Base Part Number: 1PMT5915
Description

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Introduction
The 1PMT5915A/TR13 diode is an single type zener diode that is used for a variety of applications. It is a P-channel MOSFET diode with a reverse breakdown voltage of 13V and a reverse current of 1.3mA at a junction temperature of 25°C. It has an operating temperature range of -40°C to +125°C.

Application Field
1PMT5915A/TR13 is most commonly used as a protection device in DC-DC converters, high-voltage circuits, and battery chargers. As it is a high-voltage device, it is used in applications requiring high breakdown voltage. With its low reverse current, it is often used in applications that require low leakage of power. It can also be used in circuits where reverse voltage is used for protection. Additionally, it can be used in switching and other circuits that require high-voltage diodes.

Working Principle
The 1PMT5915A/TR13 diode operates on the principle of the PN junction. The N-type material is the negative electrode, and the P-type material is the positive electrode. When a voltage is applied to the diode, current flows across the PN junction, creating a build-up of electric field. As the electric field intensity increases, the electrons and holes in the P-type and N-type materials are attracted to each other and recombine. As this current builds up, the voltage at which this recombination occurs increases until it reaches the Zener breakdown voltage, which is 13V for the 1PMT5915A/TR13. This breakdown voltage is determined by the amount of doping in the two types of materials.Once the zener breakdown voltage is reached, current can then flow across the junction in the reverse direction. The reverse current is limited by the internal resistance of the device, which is 1.3mA for the 1PMT5915A/TR13.

Conclusion
The 1PMT5915A/TR13 diode is a P-channel MOSFET diode with a reverse breakdown voltage of 13V and a reverse current of 1.3mA at a junction temperature of 25°C. It is used for DC-DC converters, high-voltage circuits, and battery chargers, and operates on the principle of the PN junction. When a voltage is applied to the diode, current flows across the PN junction, and the current builds up until it reaches the Zener breakdown voltage, which is 13V. Current can then flow across the junction in the reverse direction and is limited by the internal resistance of the device.

The specific data is subject to PDF, and the above content is for reference

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