1PMT5933BE3/TR13

Diodes - Zener - Single

The 1PMT5933BE3/TR13 is a single zener diode. It is field effect transistor (FET) passivated for improved reliability and long-term stability in high-power applications. It is primarily used for voltage and current limiting applications.

Characteristics and Features

The 1PMT5933BE3/TR13 has a peak repetitive reverse voltage of 5.9V and a less than 5mA current of reverse leakage. Its static breakdown characteristics include a zero VF reverse voltage (V Z) of 5.9V and zero temperature coefficient (T C) of 40mV/°C. Its breakdown is 6mA and the diode offers superior dV/dT characteristics and reliable switching at high current levels. It offers a fast switching time (trr) of 5ns and a high surge reverse current (IRM) of 25mA.

Applications

The 1PMT5933BE3/TR13 zener diode is primarily used for voltage and current limiting applications. Due to its features, it finds wide application in the automotive, telecommunications, power supply and distribution, battery charger and electronic control, switching, and voltage regulation industries. It can be used for DC-DC buck regulator applications, voltage slicing, and current-limiting functions.

Working Principle

The 1PMT5933BE3/TR13 consists of two semiconductor materials, namely a cathode and an anode. The materials are switched in opposite directions, passing the current through the cathode and the anode in a forward bias. When the voltage exceeds the specified threshold value, the diode conducts in the reverse direction. At this point, the voltage and current in the diode reach a maximum and stabilizes.

The breakdown voltage of the 1PMT5933BE3/TR13 is determined by the temperature coefficient (T C). This value is the total current flowing through the diode and is inversely proportional to the temperature. When a reverse voltage is applied to the circuit, the current in the diode decreases until the breakdown voltage is reached. At this point, the current increases sharply as the diode conducts in the reverse direction. This is known as the avalanche effect and is used to limit the voltage and current in the circuit.

Conclusion

The 1PMT5933BE3/TR13 zener diode is a single zener diode primarily used for voltage and current limiting applications. It offers attenuators and current limiting functions, good switching characteristics, high surge reverse current, and superior dV/dT characteristics. It has a reverse breakdown voltage (V Z) of 5.9V, a temperature coefficient (T C) of 40mV/°C, a fast switching time (trr) of 5ns, and a high surge reverse current (IRM) of 25mA. This diode can be used for DC-DC buck regulator applications, voltage slicing, and current-limiting functions in numerous industries such as automotive, telecommunications, power supply and distribution, and electronic control. The breakdown voltage of the 1PMT5933BE3/TR13 is determined by the temperature coefficient, where the current in the diode decreases until the breakdown voltage is reached and then increases sharply due to the avalanche effect.