1SS382TE85LF

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The SS383TE85LF is a diode array package designed for use in high-speed switching applications, specifically rectified and desalting systems. The package includes two N-channel power MOSFETs and one Schottky diode for protection against inductive/reverse-biased voltage spikes. This package is suitable for use in automotive, industrial, and consumer applications.

The package features an ITO-based protection technology, which allows operation up to 175°C. This high temperature durability makes it an excellent choice for high-temperature systems such as those used in solar power systems and automotive power electronics. The diode arrays are also able to provide a much lower thermal resistance than common planar diodes, allowing for superior electro-thermal performance.

The SS383TE85LF diode array package is capable of switching up to 2A of current, with a peak power rating of 16V. This makes it a suitable choice for a variety of demanding electrical designs such as DC-DC converters and linear regulators. The package is also designed to be used at frequencies up to 1MHz, making it an ideal choice for RF and high-speed data applications.

The SS383TE85LF diode array package is a versatile device, with a wide range of application possibilities. The MOSFET and diode combination provide excellent power density and thermal performance, making it suitable for high-temperature and high-current applications. In combination with its superior EMC behaviour, the device is able to provide a reliable and cost-effective solution for a range of applications.

The application areas for the SS383TE85LF device include DC-DC converters, switching systems, linear regulators, and a variety of consumer electronics. The device is also capable of providing a high level of EMC protection in industrial systems, with a 0.2dB difference for up to 3GHz. This makes it an ideal choice for consumer electronics, automotive, and industrial applications.

The working principle of the SS383TE85LF is based on PWM and synchronous rectification processes. At the beginning of a switching cycle, the MOSFET is switched on, providing a forward conduction path for current to flow. At the same time, the diode is forward-biased, providing a path for commutation current. In the process of forward current, the power MOSFET regulates the current in a linear manner, while the Schottky diode provides the necessary protection against inductive spikes.

Finally, when the MOSFET is switched off, the Schottky diode continues to conduct, thereby providing commutation for the flow of current. This ensures that no reverse voltage spikes occur and the device operates at an optimal level of efficiency.

The SS383TE85LF diode array package is a reliable and cost-effective device for use in a variety of high-speed switching applications. Its combination of PWM and synchronous rectification processes enables efficient operation in a wide range of applications, from automotive and industrial applications to consumer electronics. The package is also engineered to provide superior thermal and EMC performance.

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