Allicdata Part #: | 1SS384TE85LFTR-ND |
Manufacturer Part#: |
1SS384TE85LF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | DIODE ARRAY SCHOTTKY 10V USQ |
More Detail: | Diode Array 2 Independent Schottky 10V 100mA Surfa... |
DataSheet: | 1SS384TE85LF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Configuration: | 2 Independent |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 10V |
Current - Average Rectified (Io) (per Diode): | 100mA |
Voltage - Forward (Vf) (Max) @ If: | 500mV @ 100mA |
Speed: | Small Signal = |
Current - Reverse Leakage @ Vr: | 20µA @ 10V |
Operating Temperature - Junction: | 125°C (Max) |
Mounting Type: | Surface Mount |
Package / Case: | SC-82 |
Supplier Device Package: | USQ |
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The 1SS384TE85LF is a type of high-quality silicon-based rectifier array capable of providing world-leading efficiency and power output in several industrial applications. It has been developed by Infeneon, a leading semiconductor technology company, to meet the modern needs of digital electronic devices and devices with high power consumption requirements. It is a popular choice for the industry given its excellent performance and low cost of components.
The 1SS384TE85LF is a dual-side reverse-blocking Schottky diode array that works in a very efficient manner. It is made up of two diodes mounted on one frame and is intended for high-current applications. It is suitable for a wide range of applications such as power supply design, voltage regulation, high-frequency switching, etc. The two diodes have an identical structure and operate in parallel, allowing for a bigger current-carrying capacity and higher efficiency. The diode array also features a low voltage drop, thanks to its low forward-voltage drop, which helps reduce power losses.
The diode array also comes with a high reverse voltage withstand capability of up to 800V. This makes it suitable for use in voltage rectification applications such as control circuits and inductive load operations. It also offers a noise rejection capability of 12dB and can support a wide range of switching frequencies, allowing for a much wider range of applications. In additon, this diode array also features a soft recovery diode that helps to reduce its switching losses.
The 1SS384TE85LF is an ideal choice for power management applications as it can withstand a maximum forward current of 10AP and an operating junction temperature of 150°C. This makes it suitable for use in high-power or high-current applications like inverter or motor control. Furthermore, this diode array features a low output capacitance that helps it run cooler, thereby increasing its efficiency and reducing power losses during operation. Additionally, this device also offers high-surge current capability and low reverse leakage.
Due to its excellent performance, the 1SS384TE85LF diode array is suitable for use in a variety of industrial applications such as power control circuits, power supply design, voltage regulation, switch mode power supplies, regenerative braking circuits, and more. This device is resistant to radiation, making it suitable for aerospace applications, as well as other applications operating in high-altitude and radiation-prone environments. Additionally, it has a low reverse recovery time, allowing for higher data transfer rates.
Overall, the 1SS384TE85LF diode array is an ideal choice for a wide range of industrial applications, thanks to its excellent efficiency, performance and cost-effectiveness. Its high-current and high-voltage capabilities, low forward voltage drop and low output capacitance, combined with its rugged design make it a reliable choice for implementing advanced solutions. The device is easy to install and also comes with a robust design which ensures reliable operation, even in harsh operating conditions.
The specific data is subject to PDF, and the above content is for reference
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