Allicdata Part #: | 1SV246-TL-E-ND |
Manufacturer Part#: |
1SV246-TL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE PIN 50V 50MA DUAL MCP |
More Detail: | RF Diode PIN - 1 Pair Series Connection 50V 50mA 1... |
DataSheet: | 1SV246-TL-E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | PIN - 1 Pair Series Connection |
Voltage - Peak Reverse (Max): | 50V |
Current - Max: | 50mA |
Capacitance @ Vr, F: | 0.23pF @ 50V, 1MHz |
Resistance @ If, F: | 5 Ohm @ 10mA, 100MHz |
Power Dissipation (Max): | 100mW |
Operating Temperature: | 125°C (TJ) |
Package / Case: | SC-70, SOT-323 |
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The 1SV246-TL-E is a high-frequency diodes manufactured by NXP. It is a surface mount packaged glass passivated junction silicon Schottky diode, made specifically for RF applications. With an anode connected to the package and the cathode connected to the terminal, this diode is suitable for common signal, mix signal and high-frequency switching applications.
The 1SV246-TL-E has many advantages, such as enhanced frequency and bandwidth performance, lower reverse current and improved junction capacitance for improved signal quality. It has a robust construction, very low resistance and it is fully compatible with automatic assembly equipments. With its low capacitance, the 1SV246-TL-E allows for an improved signal quality and better performance in RF applications.
The 1SV246-TL-E has a maximum operating frequency of 10GHz with a frequency range of 400kHz to 8GHz. It has a maximum operating voltage of 160V and maximum capacitance of 10pF. This diode also has a very low dynamic resistance at 250mΩ, making it ideal for ultra high-frequency applications. The 1SV246-TL-E has a reverse angle connection, with a maximum continuous forward current of 1.5A and a maximum peak power of 40W.
The working principle behind the 1SV246-TL-E is relatively simple. During operation, the diode acts as an open circuit when its anode is positively biased, and as a closed circuit when its anode is negative. The diode will allow electrical current to flow in only one direction, while blocking current in the opposite direction. This directional property allows the diode to protect the connected circuitry from reverse polarity or unexpected overvoltages.
The 1SV246-TL-E has a wide variety of applications, mainly in RF circuits. It is ideal for RF amplifiers, cellular radio systems, transmitters, receivers, antennas, base stations, data links and other high-frequency applications. The 1SV246-TL-E can also be used in semiconductor devices, medical equipment, navigation systems, and satellite communication links. This sophisticated device is designed for the demanding requirements of today’s wireless communications and digital signal processing applications.
The 1SV246-TL-E is a highly reliable, radiation tolerant high-frequency diode from NXP. With its advanced characteristics and capabilities, this diode is suitable for a wide array of applications from semiconductor devices to digital signal processing and military communications. Its low capacitance and improved bandwidth performance allow for better signal quality, making it an ideal choice for RF applications.
The specific data is subject to PDF, and the above content is for reference
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