1SV251-TB-E

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	PIN - 1 Pair Series Connection
Voltage - Peak Reverse (Max):	50V
Current - Max:	50mA
Capacitance @ Vr, F:	0.23pF @ 50V, 1MHz
Resistance @ If, F:	4.5 Ohm @ 10mA, 100MHz
Power Dissipation (Max):	150mW
Operating Temperature:	125°C (TJ)
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	3-CP
Base Part Number:	1SV251

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Introduction

1SV251-TB-E is a Surface Mount Schottky Barrier Diode typically used in RF applications. It is a small and compact chip, with a compact package size of 3 pad DFN2510-6, and can stand exceptionally high frequencies up to 6GHz. In addition, it has excellent DC and RF performance, making it a suitable choice for many engineering devices.

Application Field

1SV251-TB-E is typically used in RF applications. Since it has an excellent RF performance, it can be applied in the areas of communications, information, telecom and broadcasting systems. In addition, it is also suitable for usage in wireless data transmission services, RF microwave components, RF receivers and wireless communication.

Working Principle

1SV251-TB-E is a Schottky Barrier Diode, which is a special type of diode composed of two sections, a p-type and an n-type semiconductor. These two sections are separated by a Schottky Barrier at their junction. The Schottky Barrier is an energy barrier or a potential barrier that prevents the electrons from recombining with their holes. Instead, they are forced to flow through the diode and can thus be used as a rectifying component of a circuit. The 1SV251-TB-E Schottky Barrier Diode also consists of additional components that improve the device’s performance such as a reverse drain, protrusions, and plating. The reverse drain is implanted in order to minimize the potential applied field at the contact. The protrusions and plating improve the connection between the p-n junction and the surrounding layers, allowing for more efficient switching.

Advantages

There are a number of advantages to using 1SV251-TB-E in RF applications. One of the main benefits is its low leakage current. This helps preserve the energy in the diode, resulting in reduced power consumption. In addition, it has a low operating current and optimized electrical stability which provides a more robust performance. Furthermore, the device is also able to withstand high temperatures and does not require high switching speed to perform, making it a great option for a variety of engineering devices.

Conclusion

1SV251-TB-E is a Schottky Barrier Diode used in RF applications. It has a wide range of benefits, including low leakage current, low operating current, optimized electrical stability and high frequency performance up to 6GHz. This makes it a great choice for a variety of engineering devices, including those used in the areas of communications, information, telecom, and broadcasting systems.

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