1SV249-TL-E Discrete Semiconductor Products |
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Allicdata Part #: | 1SV249-TL-EOSTR-ND |
Manufacturer Part#: |
1SV249-TL-E |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE PIN 50V 50MA DUAL MCP |
More Detail: | RF Diode PIN - 1 Pair Series Connection 50V 50mA 1... |
DataSheet: | 1SV249-TL-E Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.10253 |
6000 +: | $ 0.09592 |
15000 +: | $ 0.08930 |
30000 +: | $ 0.08820 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - 1 Pair Series Connection |
Voltage - Peak Reverse (Max): | 50V |
Current - Max: | 50mA |
Capacitance @ Vr, F: | 0.23pF @ 50V, 1MHz |
Resistance @ If, F: | 4.5 Ohm @ 10mA, 100MHz |
Power Dissipation (Max): | 100mW |
Operating Temperature: | 125°C (TJ) |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | 3-MCP |
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The 1SV249-TL-E is a diode published by Taiwan Semiconductor Corporation designed for use in RF applications. This diode is particularly useful for RF applications due to its low capacitance and low reverse leakage current. The 1SV249-TL-E has a maximum operating temperature of 150°C, making it a useful choice for a variety of applications.
The 1SV249-TL-E is a Schottky diode, which means it has a lower forward voltage drop than other diode types. This feature makes the diode an ideal choice for RF applications, as it helps reduce the power consumption of the circuit. In addition, the diode has a very low reverse leakage current, which helps to increase the efficiency of the circuit.
The 1SV249-TL-E is a surface-mount device that is easy to install and can be used with existing PCB layouts. The diode is rated for operation up to 100 MHz, providing a wide range of applications. The device also has a wide operating temperature range from -65°C to 150°C, making it suitable for a variety of environmental conditions.
The 1SV249-TL-E diode works by allowing current to flow in a forward direction, while blocking current in the reverse direction. It works in this way because of its non-linear current-voltage characteristics. When a forward-bias voltage is applied to the diode, it allows a greater amount of current to flow in the forward direction. When a reverse-bias voltage is applied, the diode blocks current from flowing in the reverse direction.
The 1SV249-TL-E diode can be used in a variety of electronic circuits, including RF amplifiers, RF power amplifiers, RF filters, voltage regulators and more. The diode also has a variety of protective features, including overvoltage and thermal protection, which helps protect the device from damage caused by excessive currents and voltages.
Overall, the 1SV249-TL-E is a highly useful RF diode that can be used in a variety of circuits. Its low capacitance and low reverse leakage current make it ideal for RF applications, while its wide operating temperature range and protection features make it suitable for a variety of environments. With its easy installation, it is an attractive choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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