20ETF12FP Allicdata Electronics
Allicdata Part #:

20ETF12FP-ND

Manufacturer Part#:

20ETF12FP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 1.2KV 20A TO220FP
More Detail: Diode Standard 1200V 20A Through Hole TO-220AC Ful...
DataSheet: 20ETF12FP datasheet20ETF12FP Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: 20ETF12
Description

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Diodes are a type of rectifier that can convert alternating current (AC) to direct current (DC). The single diode is the simplest type of diode, consisting of a single layer of PN-type semiconductor material. The diode\'s terminals are connected to the P and N materials respectively, and when current passes through the diode an electric field forms between the P and N materials, creating a potential barrier that cannot be penetrated by electrons. This allows the diode to act as a one-way valve, allowing current to pass through in only one direction.

The 20ETF12FP is a single diode rectifier module that is used in power supplies, motor drives and storage applications. It is a P-type field effect transistor (FET) with an integrated Schottky (MOS) diode. It provides low forward voltage drop and reverse leakage current, making it ideal for high-frequency and high-current applications. The 20ETF12FP features low power loss, wide operating temperature range and low-noise characteristics.

The working principle of the 20ETF12FP is based on PN junction diode. When a voltage is applied to the diode\'s terminals, an electrical field is established between the two materials. The forward breakdown voltage of the diode can be adjusted by the process of doping the semiconductor material. At voltage potentials above the breakdown voltage, the diode will become conductive, allowing current to flow in only one direction.

Due to the forward bias voltage of the diode, a voltage drop is created across the diode. The forward voltage drop of the 20ETF12FP is typically between 0.2 V and 0.5 V. In addition, the 20ETF12FP also has low reverse leakage current, which helps reduce wasted energy and improves system efficiency.

The 20ETF12FP is a versatile device, and can be used in a variety of applications. It is ideal for automotive, consumer and medical electronics, as well as lighting and solar applications. In solar applications, the 20ETF12FP is used for solar cell protection and synchronous rectification. It is also used in battery charging applications and inverter applications. In motor control applications, the 20ETF12FP is used as a synchronous rectifier to reduce switching losses and increase the efficiency of the system.

The 20ETF12FP is a valuable device for a variety of applications. Its low forward voltage drop and reverse leakage current make it ideal for high-current, high-frequency applications. It is also versatile, and can be used in automotive, consumer and medical electronics, as well as lighting and solar applications.

The specific data is subject to PDF, and the above content is for reference

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