20ETF06STRL Allicdata Electronics
Allicdata Part #:

20ETF06STRL-ND

Manufacturer Part#:

20ETF06STRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 600V 20A D2PAK
More Detail: Diode Standard 600V 20A Surface Mount D2PAK
DataSheet: 20ETF06STRL datasheet20ETF06STRL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 160ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: 20ETF06
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

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Diodes - Rectifiers - Single: 20ETF06STRL application field and working principleDiodes are the foundation of the electrical industry and are used in a wide variety of applications. The 20ETF06STRL is a P-channel enhancement mode MOSFET which can be used as a switch in a wide range of applications. In this article, we will discuss the application fields and working principle of the 20ETF06STRL.First and foremost, the 20ETF06STRL is suitable for a wide range of devices in the standard digital circuits, such as load switch, level shifter and circuit protection. Specifically, the primary application fields of 20ETF06STRL are as a load switch, level shifter and circuit protection which can happen in computers, mobile phones and many types of electronics. Furthermore, it can be used in any circuit where a low on-state resistance, low input capacitance and low cost are needed.In order to understand how the 20ETF06STRL works, it is important to consider its structure; the 20ETF06STRL consists of two terminals - the drain and source. When a voltage is applied to the gate terminal, a current flows through the device from the source to the drain. This current is controlled by the voltage applied to the gate and is further regulated due to the voltage across the source and drain. The on-state resistance of the device is minimal, usually around 0.03 ohms, allowing a high current to flow.It is important to note that the 20ETF06STRL has three layers. The first is the gate layer, which is a very thin insulator that is charged negatively when a voltage is applied to it. The second is the body layer, which is an uncharged conductive layer that separates the gate layer and the third layer, the drain. The third layer is the source layer and this will carry the majority of the current when the device is in its on state.In conclusion, the 20ETF06STRL is a great choice for any number of applications whether it be for high speed, low power switch applications, voltage level translation and circuit protection. Its low on-state resistance, low input capacitance and low cost make it the perfect choice for a variety of projects. Its construction is also simple to understand; a negatively charged gate layer, an uncharged body layer and a source layer that carries the majority of the current when the device is in its on state. With this knowledge, the 20ETF06STRL can help to fulfill many switching requirements.

The specific data is subject to PDF, and the above content is for reference

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