20ETS12

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The 20ETS12 is an ultrafast single diode with a rectifier rating, designed to expand the current handling capability of single surface-mount diodes. This diode features high forward surge current rating, low forward voltage drop, and fast reverse recovery time. It is widely used in high-power, high-performance voltage-controlled switching circuits and motor control applications. In this article, the application field and working principle of the 20ETS12 will be discussed in detail.

Application Field

The 20ETS12 diode is used in various power applications. It can be used in high-voltage bridge rectifier applications, DC/DC converters, EMI/EMC filter applications and as a switching diode in power/RF switch circuits. It is also used in automotive and electronic devices requiring high voltage rectification. It is suitable for use in circuit protection where high surge capability and high current handling is required. In addition, the 20ETS12 can be used as a rectifier in automotive alternators, switching circuits, and low-power control circuits.

Working Principle

The 20ETS12 works by utilizing semiconductor materials, such as a silicon-doped aluminum substrate. When biased negatively by an external voltage source, current flows through the anode-cathode junction in the forward direction, which then produces an electric field that causes electrons to move from higher energy level to lower ones. The forward voltage drop of the diode is determined by the built-in potential of the diode. When the current is reversed, the diode can block current in the reverse direction, thanks to its inherent reverse voltage blocking capability.

When the anode voltage of the 20ETS12 goes below -1 V, the reverse current flows until the entering junction voltage is reset to zero or the breakdown voltage of the diode is reached. As the current is removed from the anode, the stored charge will then be released toward the cathode, resulting in a fast recovery of the diode. This is why the 20ETS12 has a fast recovery time compared to other diodes.

The 20ETS12 is also capable of handling high surge currents. Its high surge current capability is due to its vertical conduction structure, which helps reduce the thermal effects on the junction area. Furthermore, the spine anode and dome cathode construction allow the diode to handle higher peak currents.

The 20ETS12 can also be used in high-voltage rectification applications. Its high voltage rating makes it suitable for high-power applications, where a high-voltage rectifier diode is needed. Additionally, its low forward voltage drop and high surge capability helps reduce conduction losses.

In conclusion, the 20ETS12 is an ultrafast single diode with a rectifier rating, designed to expand the current handling capability of single surface-mount diodes. It is suitable for applications requiring high surge capability, fast recovery times, and high voltage rectification. It is widely used in high-power, high-performance voltage-controlled switching circuits and motor control applications.

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