2DC4617Q-7 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors, sometimes called semiconductor transistors, are electronic devices that are widely used in many modern electronic applications. One type of transistor, the bipolar junction transistor (BJT), is particularly useful and has become increasingly popular in recent years. The 2DC4617Q-7 is a widely used single BJT that is often employed in a variety of applications and is also very widely used in both industrial and consumer products.

The 2DC4617Q-7 is a NPN-type BJT with a Collector-Emitter Voltage (V CES) rating of 30V and a maximum Collector Current of 500mA. It has a relatively low Collector-Base Voltage (V CBE) of 20V and a relatively high h fe of 55. It is a moderately power-efficient device with an average collector power dissipation of 300mW. In addition, it has a high-frequency response of 150MHz.

The 2DC4617Q-7 is an ideal choice for applications that require moderate power operation with high current gain, such as small signal amplification and switching. The device is also suitable for driving large loads, such as solenoids, motors and LEDs. In addition, due to its low noise and high-frequency response, the 2DC4617Q-7 is an excellent choice for applications that require accurate signal detection and discrimination.

The working principle of BJT transistors is relatively simple. The device consists of three layers of semiconductor material (base, emitter and collector) that are arranged in an ‘arrow’ configuration. The base is the control layer, while the emitter and collector layers are the power layers. When a voltage is applied to the base, it attracts electrons from the emitter and delivers them to the collector, thereby increasing the collector current. The current gain of the device (h fe) is the ratio of the collector current to the base current, and is usually relatively high for BJT transistors.

In the case of the 2DC4617Q-7, the current gain is 55, meaning that for each unit of current that passes through the base, 55 units of current passes through the collector. This is ideal for small signal amplification or for driving large loads. The low collector-base voltage of the 2DC4617Q-7 also makes it particularly attractive for high current applications. The Collector-Emitter voltage of the 2DC4617Q-7 is also relatively low, meaning that it is suitable for switching applications where a low voltage is needed to switch between two states.

The 2DC4617Q-7 is a widely-used single BJT that is well-suited for a variety of applications, including small signal amplification, driving large loads, and switching. It has a relatively high current gain, low collector-base voltage, and a low collector-emitter voltage, making it an ideal choice for a variety of applications. The working principle of the BJT is also relatively simple, with the device employing a three-layer configuration consisting of a base, emitter and collector. The current gain of the 2DC4617Q-7 is also relatively high, making it an ideal choice for applications that require accurate signal detection and discrimination.

The specific data is subject to PDF, and the above content is for reference