2DC4617QLP-7 Discrete Semiconductor Products

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2DC4617QLP-7 Application Field and Working Principle

2DC4617QLP-7 is a single bipolar (BJT) transistor, manufactured by IXYS Corporation and part of the CorPt family. It is a 700V, 6A and 0.155 Ohm logic level MOSFET.

Application Field

2DC4617QLP-7, being a high voltage MOSFET, is reliable and suitable for usage in power applications. It is applied in various switch mode power converters, radio-frequency and telecommunications applications, industrial automation and even in distributed power systems. It is widely used for the following purposes:

• Buck, boost and buck-boost converters
• DC-DC converters
• Power insulation in SMPS and UPS
• Automotive inverters and motor control

Working Principle

The 2DC4617QLP-7 is a P-channel high voltage MOSFET. It uses the vertical DMOS process for lightning fast switching and increased efficiency. The transistor has a maximum Drain-Source voltage of 700V, maximum Drain-Source current of 6A, and maximum Drain-Source On-Resistance of 0.155 Ohm. Its RDS(on) increases with the temperature increase and an RDS(on) rising rate of 0.3Ω/℃ should be taken into account for reliable operation at higher temperatures.

The Gate threshold voltage of the 2DC4617QLP-7 is 5V. This implies that the Gate Source voltage should be at least 5V to get the transistor to turn on. The transistor can be switched on/off by controlling the Gate-Source voltage, which can be done with discrete logic transistors. However, a bias voltage of 3V and ESD protection of 2KV should be given to ensure its proper operation.

In addition, 2DC4617QLP-7 has an excellent switching speed of 250ns, which makes it very suitable for drive circuits in switch mode power supplies and other fast switching applications. Moreover, it has a maximum Gate capacitance of 796nF which provides good noise immunity and ESD protection.

All in all, 2DC4617QLP-7 is a reliable, high voltage single bipolar (BJT) transistor for a wide range of applications and can be used for high power conversions and high current control.

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