2DC4617S-7-F Allicdata Electronics

2DC4617S-7-F Discrete Semiconductor Products

Allicdata Part #:

2DC4617S-FDITR-ND

Manufacturer Part#:

2DC4617S-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 50V 0.15A SOT523
More Detail: Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 150m...
DataSheet: 2DC4617S-7-F datasheet2DC4617S-7-F Datasheet/PDF
Quantity: 60000
Stock 60000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Power - Max: 150mW
Frequency - Transition: 180MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523
Base Part Number: 2DC4617
Description

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2DC4617S-7-F is a type of bipolar junction transistor (BJT). It is also referred to as a 3-pin surface mount, 2-lead transistor and is broadly used in systems where controlling electrical current is made possible with very low power dissipation. It is configured as an NPN-type with a maximum Vce of 10V, a maximum Ic of 0.2A and falls under the classification of “Medium Power Transistors”.

Bipolar junction transistors are components that are used to amplify current from one point to another on an electronic circuit. They are mostly composed of two types of doped semiconductor regions, a base and a collector, between the source and the drain. They can be found in most modern electronic circuits and are used for a variety of purposes, such as switching a signal from one line to another, amplifying weak signals, and regulating the current within a circuit.

The transistor will act like an amplifier in the sense that its current gain is proportional to its base voltage which is bias to the output current. The current gain is known as the collector-emitter current gain, αFE, and is usually determined by the ratio of the collector current (Ic) and the base current (Ib). Generally, the higher the value of αFE the higher the current gain will be.

Most BJTs used today are of the NPN-type, which means that the 2DC4617S-7-F is an NPN transistor. This means it has two P-doped regions and one N-doped region with a connection to the emitter lead, collector lead and base lead, respectively. When an NPN transistor is used as an amplifier, a voltage source will be connected to the input so that it can bias the transistor in the active region. When the base lead is connected to a high voltage from the input source, it will allow current to flow from the collector to the emitter and this current amplification is what produces the desired output.

The working principle of an NPN transistor is based on the movement of electrons from the base to the collector and from the collector to the emitter. When a voltage is applied to the base, it attracts the electrons from the base and this causes current to flow from the base to the collector. The current then flows from the collector to the emitter and because the emitter is at a lower potential, the current is then amplified. This is what gives the transistor its current gain and is the basis of its operation.

The 2DC4617S-7-F is commonly used in the fields of instrumentation, audio, and other low power circuits. It is capable of delivering strong and reliable performance when used in these applications and can provide a wide range of current-control possibilities. Its small package makes it ideal for applications where space is a concern and its low power consumption makes it economical for most projects. As a result, it can be also used in other low power applications such as automotive systems, home appliances, and telecommunications.

In conclusion, the 2DC4617S-7-F is a type of transistor that is used in many circuits that require amplifying current and it is configured as an NPN-type. It is primarily used in instrumentation, audio and other low power applications due to its small package and low power consumption. Its working principle is based on the movement of electrons from the base to the collector and then to the emitter, which is what produces the current gain.

The specific data is subject to PDF, and the above content is for reference

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