2EZ10DE3/TR8

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A 2EZ10DE3/TR8 is a Zener diode, typically used in semiconductor technologies. It is a single-junction diode specifically designed to produce a low voltage break down (zener) effect. It is an NPN transistor-based device that has an emitter and a collector, with a silicon substrate, an N type diffusion layer on top, and two PN junctions.

In practical applications, this diode is usually used to create a high-voltage Zener breakdown, which forms the basis of circuit protection. As such, it is typically used in switches, fuses and voltage regulators, as well as other applications where high voltage breakdowns are needed.

Zener diodes, and 2EZ10DE3/TR8 in particular, are designed so that when the voltage across the p-n junction reaches the zener breakdown point, the voltage applied to the junction does not change, regardless of the external conditions. This allows the circuit to resist the sudden surges of current or voltage, and thus protects the connected components.

In addition, the 2EZ10DE3/TR8 diode has the ability to “clamp” the voltage at the breakdown point. This is a useful feature since it allows the voltage to be regulated and constant, preventing it from exceeding a certain value.

The 2EZ10DE3/TR8 diode is also used in circuits that require low-voltage current regulation. It can be used as a voltage jolt device, where the diode is designed to only allow current to pass when a particular voltage threshold is exceeded. This allows the diode to regulate the current, preventing it from going too high. It is also used in surge protection circuits.

In summary, the 2EZ10DE3/TR8 is a single-junction Zener diode used for circuit protection, voltage clamping and voltage regulation. It is designed to resist surges of current and voltage, as well as to provide an adjustable voltage regulation. It can also be used in surge protection circuits, as a voltage jolt device, or as a current regulation device.

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