2EZ12D10E3/TR12

Diodes - Zener - Single: 2EZ12D10E3/TR12 Application Field and Working Principle

Diodes, also known as rectifiers, are a type of semiconductor device used to convert alternating current to direct current. A Zener diode is a specific type of diode that, when connected in a reverse-bias direction, exhibits a comparatively constant and well-defined reverse breakdown voltage between its anode and cathode terminals.

The 2EZ12D10E3/TR12 is an avalanche diode produced by the Taiwan Semiconductor Corporation (TSC). It is designed to provide protection against familiar overvoltage circuit conditions and equivalent power handling, while providing high-speed response times and superior noise immunity. The device is provided in an E-pad package that is suitable for automated processes, and is compliant to RoHS 2002/95/EC, Reach and WEEE directives.

Application Field

The 2EZ12D10E3/TR12 is a reliable solution for general purpose switching applications, such as power converters, power supplies, ATX and laptop power supplies, AC/DC adapters, and battery-based systems. It is also suitable for a variety of line-protection applications, such as cell phones and telecom equipment. The device can be used for surge protection and transient voltage suppression (TVS) applications, or as a general dual-side protection application, where reverse-bias voltage and current must be limited.

Working Principle

The 2EZ12D10E3/TR12 operates in a breakdown mode when a sufficient reverse bias voltage is applied. It has a highly reliable, nonlinear breakdown voltage, usually between 8 and 12 Volts, depending on temperature and current. When the reverse voltage reaches this point, the diode\'s resistance decreases, resulting in a large increase of the current flow. This current is referred to as the avalanche current, and it is typically much higher than that produced by an unidirectional diode.

The device\'s breakdown voltage is directly proportional to the amount of reverse bias current applied, and it is common to refer to the ratio between these two values as the breakdown voltage ratio (BVR). The 2EZ12D10E3/TR12 has a BVR of 3.0 V/μA, which is relatively high when compared to other devices. Additionally, the thermal temperature coefficient of the device is comparable to that of a standard resistor, so it exhibits accurate temperature compensation in the presence of large temperature changes.

The device also features a reverse-recovery time (trr) of 30 ns and an on-state reverse-recovery current of 0.1 μA. This ensures a low-capacitance and minimal reverse-recovery switching loss, resulting in improved efficiency, reduced power dissipation, and reduced switching noise.

Conclusion

The 2EZ12D10E3/TR12 is a reliable and cost-effective avalanche diode for a variety of applications such as surge and transient voltage suppression, and dual-side protection. Its high BVR ratio, reverse-recovery time, and on-state reverse-recovery current ensure accurate temperature compensation and low switching loss, while its E-pad package is suitable for automated processes. With its versatile performance and durable construction, the 2EZ12D10E3/TR12 is an ideal choice for many general-purpose switching applications.