2EZ110D10E3/TR8 Allicdata Electronics
Allicdata Part #:

2EZ110D10E3/TR8-ND

Manufacturer Part#:

2EZ110D10E3/TR8

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 110V 2W DO204AL
More Detail: Zener Diode 110V 2W ±10% Through Hole DO-204AL (DO...
DataSheet: 2EZ110D10E3/TR8 datasheet2EZ110D10E3/TR8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 110V
Tolerance: ±10%
Power - Max: 2W
Impedance (Max) (Zzt): 250 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 83.6V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 2EZ110
Description

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2EZ110D10E3/TR8 Application Field and Working Principle

The 2EZ110D10E3/TR8 is a Zener Diode from a series of single zener diodes. This diode is designed for a wide range of applications, including voltage regulation, clamping, surge protection, and ESD protection. It features low power consumption and exceptional thermal stability.

Applications of 2EZ110D10E3/TR8

The applications of 2EZ110D10E3/TR8 are manifold. It is a very versatile diode, capable of voltage regulation, voltage clamping, surge protection, and ESD protection. In voltage regulation applications, it can be used in linear regulators, in order to generate a fixed output voltage. It can also be used in switching power supplies, as part of the voltage regulation circuit. In voltage clamping, it can be used to protect circuits from high voltage spikes. It is also used to protect sensitive electronic components, such as microprocessors, from overvoltage and electrostatic discharge (ESD).

Working Principle of the 2EZ110D10E3/TR8

The working principle of the 2EZ110D10E3/TR8 is based on the principle of Zener breakdown. The diode consists of a heavily doped section towards its anode, similar to a regular diode. However, in the case of the 2EZ110D10E3/TR8, the heavily doped section is located near the cathode. This allows the reverse breakdown voltage of the diode to be adjusted by changing the doping profile.

When the reverse breakdown voltage of the diode is reached, a large current flows through the diode in the reverse direction, as the diode is overdriven. This current flow can be controlled by selecting the appropriate parameters such as breakdown voltage and standoff voltage.

The 2EZ110D10E3/TR8 also features a low power consumption, as it is designed to be used in low-voltage, low-power applications. It also features exceptional thermal stability, which is essential for use in many applications.

Conclusion

This article has provided an overview of the 2EZ110D10E3/TR8, its applications and its working principle. The 2EZ110D10E3/TR8 is a versatile diode, capable of a wide range of applications in voltage regulation, voltage clamping, surge protection and ESD protection. It has a range of features, including low power consumption and exceptional thermal stability.

The specific data is subject to PDF, and the above content is for reference

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