2EZ11D10E3/TR8 Datasheet/PDFZener diodes are usually made with a highly doped p–n junction, which when operated in reverse break-down permits a large amount of reverse current. This is the underlying principle of the Zener diode.
2EZ11D10E3/TR8 is a single zener diode with a maximum stand-off voltage of 11V. It is commonly used in the electronic industry for the purpose of voltage regulation and stabilisation. The 2EZ11D10E3/TR8 is available in a variety of packages like through-hole and surface mount, so it can be easily adapted to a wide range of applications.
A Zener diode has an avalanche break down mechanism, which means that as a reverse bias reaches the rated breakdown voltage (Vz) of the diode, the junction starts to conduct heavily. This is due to a large number of free electrons present in the junction. These increase the reverse current exponentially due to the avalanche effect, thereby producing a highly stable voltage drop across the diode.
The breakdown voltage of the diode 2EZ11D10E3/TR8 is rated at 11V. This means that at any reverse bias lower than 11V, the diode has a relatively high resistance value and a very low current (leakage current). This also means that the voltage in the circuit is usually regulated at a constant 11V, by the Zener diode, due to its stability.