Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	15V
Tolerance:	±10%
Power - Max:	2W
Impedance (Max) (Zzt):	7 Ohms
Current - Reverse Leakage @ Vr:	500nA @ 11.4V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-204AL (DO-41)
Base Part Number:	2EZ15

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Diodes - Zener - Single

2EZ15D10/TR12 is a single zener diode packaged in a SOT-23 plastic surface mount package, commonly used in power supplies, communication applications and various other switched mode designs. It has a reverse breakdown voltage (Vz) of 15V and a power dissipation (Pmax) of 0.1W.

Application Field

2EZ15D10/TR12 is particularly advantageous when it comes to low power designs as it was designed to have low forward voltage drop and low capacitance. The small footprint of the SOT-23 package makes it ideal for applications with density requirements.The 2EZ15D10/TR12 is mainly used in order to regulate voltage and protect against surge fields in power supplies, switched-mode converters, communication systems, and high speed logic circuits. It is also used as a signal clamp in communication systems, motor drives, etc. In addition, it has various applications in the automotive sector and is part of the design for automotive lighting, for example, automatic headlights, door lights and tail lights.

Working Principle

The 2EZ15D10/TR12 is a voltage-regulating diode with a reverse breakdown voltage of 15V, and is typically used as a pop-up protection device. When the applied voltage across the diode is lesser than the breakdown voltage, the diode behaves like an ideal diode, allowing current to flow in the forward direction with very low forward voltage drop. If the applied voltage exceeds the breakdown voltage, then the reverse voltage across the diode increases, allowing current to flow in the reverse direction, and preventing further voltage increases.The 2EZ15D10/TR12 uses the principle of the avalanche breakdown to regulate the voltage. The avalanche breakdown is a diffusion process that occurs when a high electric field is applied across a region of depletion (non conducting) in semiconductor devices such as diodes. In this process, the electrons and holes present in the semiconductor material are accelerated to a great extent. These particles acquire enough kinetic energy to cause ‘impact ionization’, in which existing electron-hole pairs are broken down and generate more electron-hole pairs. For the 2EZ15D10/TR12, this process begins when the reverse bias is greater than the breakdown voltage and the amount of current that can pass through the junction starts to increase exponentially.In conclusion, 2EZ15D10/TR12 is a single zener diode packaged in a SOT-23 plastic surface mount package. With its low forward voltage drop and low capacitance, it is ideal for low-power designs and applications with density requirements. It is mainly used to regulate voltage and protect against surge fields in power supplies, switched-mode converters, communication systems, and high speed logic circuits. The device functions by using the principle of the avalanche breakdown process, in which a high electric field is applied across a region of depletion in a semiconductor device and a large number of electron-hole pairs are generated as a result.

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