2EZ7.5D10E3/TR8

The 2EZ7.5D10E3/TR8 is a single zener diode, meant to protect against highly capacitive load currents. They protect power supplies and circuit designs that require a high degree of protection from overloads and other dangerous currents. To achieve this, the diodes employ two distinct principles.

The first is a tunnel breakdown voltage, which occurs when the junction between two regions of a semiconductor is exposed to a high enough electric field to be forced into sudden avalanche breakdown resulting in a current flow. This leads to a significant decrease in the reverse voltage, leading to a decrease in the forward voltage.

The other principle is called avalanche breakdown. In this process, when electrons collide with an impurity or defect in the semiconductor, they are forced into higher energy states and create free electrons and ion pairs. This creates an inverted region in which the current-voltage of the circuit is reduced. This reduces the reverse voltage and increases the forward voltage.

In addition to protection, the diodes can also be used as voltage regulators or voltage dividers. By adjusting the current-voltage of the circuit, they can supply voltages with a desired accuracy. Also, they can be used as over-voltage protection devices, by limiting the voltage drop across the diodes.

The 2EZ7.5D10E3/TR8 is useful in a vast array of applications, especially in the electronics industry, such as in regulated power supply designs, smart systems for vehicles, and industrial assembly processes. Other uses include in circuit protection and noise suppression.

The 2EZ7.5D10E3/TR8 is just one example of a single zener diode that can be used to protect a circuit from dangerous overloads. It is capable of protecting both power supplies and circuit designs from short circuits, over current, excessive voltage surges, and other hazardous conditions. With its powerful tunnel breakdown voltage and avalanche breakdown capabilities, it is ideal for a wide range of applications.