2EZ75D2E3/TR8 Allicdata Electronics
Allicdata Part #:

2EZ75D2E3/TR8-ND

Manufacturer Part#:

2EZ75D2E3/TR8

Price: $ 0.65
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 75V 2W DO204AL
More Detail: Zener Diode 75V 2W ±2% Through Hole DO-204AL (DO-4...
DataSheet: 2EZ75D2E3/TR8 datasheet2EZ75D2E3/TR8 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.58510
Stock 1000Can Ship Immediately
$ 0.65
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 75V
Tolerance: ±2%
Power - Max: 2W
Impedance (Max) (Zzt): 90 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 56V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 2EZ75
Description

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The 2EZ75D2E3/TR8 is a single-sided Zener diode from NXP Semiconductor used in a wide range of applications. It has a very low forward voltage drop and provides good protection against reversed current or transients. Due to its low VF, it is typically used as a clamping device or in low-capacitance inverter circuits. In addition, it can also be used as a current-limiting protection device.

The 2EZ75D2E3/TR8 is an ideal choice for circuit protection and high-dynamic range applications. It has low capacitance and low forward voltage drop, which makes it ideal for applications involving high-frequency switching. The diode\'s low impedance also makes it ideal for shunt and clamping applications as well as for supplying current-limiting protection.

The device features an industry-standard TO-92 package and can handle up to 30V and 500mA. It is designed to meet the rated current rating at up to the recommended voltage levels. The 2EZ75D2E3/TR8 is rated to operate at temperatures up to 70°C.

The 2EZ75D2E3/TR8 is built using a PN junction constructed of gallium arsenide and gallium phosphide. It is a relatively simple device to use, with minimal external components needed. Its working principle is based on a reverse-biased PN junction, which offers low current leakage when in the forward biased state. The device is able to withstand a high forward surge current and provides a low forward voltage drop.

The 2EZ75D2E3/TR8 diode can be used in many different applications, such as power supply regulation, overload protection, surge protection, reverse current protection and input rectification. It is also often used in inverter circuits and flyback applications. The device\'s high capacitance makes it ideal for high-frequency switching and suppressing spark transients, while providing low forward voltage drop. Additionally, it offers excellent dynamic performance for fast-switching circuits, and its wide range of operating voltages makes it suitable for a variety of applications.

In summary, the 2EZ75D2E3/TR8 is a single-sided Zener diode that can be used in a wide range of applications. Its low capacitance and low forward voltage drop make it ideal for high-frequency switching applications, while its high surge current rating and low forward voltage drop make it suitable for shunt and clamping applications. The device is designed to meet the rated current rating at up to the recommended voltage levels. It is built using a PN junction constructed of gallium arsenide and gallium phosphide, and its working principle is based on a reverse-biased PN junction. With its wide range of applications, the 2EZ75D2E3/TR8 can be an ideal choice for circuit protection and high-dynamic range applications.

The specific data is subject to PDF, and the above content is for reference

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