2N3501 Allicdata Electronics
Allicdata Part #:

2N3501-ND

Manufacturer Part#:

2N3501

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 150V 0.3A TO-39
More Detail: Bipolar (BJT) Transistor NPN 150V 300mA 1W Throug...
DataSheet: 2N3501 datasheet2N3501 Datasheet/PDF
Quantity: 1421
Stock 1421Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)
Description

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Transistors are often used in a variety of electronics, such as amplifiers, radio receivers, and oscillators. The 2N3501 is a type of transistor known as a Bipolar Junction Transistor, or BJT, which is a three-terminal active semiconductor device. It is commonly used as a switching device or amplifier due to its high voltage and power ratings, and its two general application fields are switching and linear amplification.

2N3501 Application Fields

The 2N3501 is most commonly used as an amplifier for high-frequency signals, such as in cellular phones, Bluetooth systems, and radio stations. It is also commonly used in switching circuits due to its high voltage and power capabilities, allowing it to switch the power in a circuit quickly and efficiently. It can be used as a switching device to turn on lights, motors, and other power consuming devices. It is also used in DC-to-AC inverter circuits as an amplifier.

2N3501 Working Principle

The 2N3501 operates using the same basic principles as other BJTs by using electrons in a semiconductor material to create a charge that can be amplified. Two voltage sources, one positive, the other negative, are used to create a current flow through the semiconductor material, which is either p-type or n-type. The two voltage sources create two “junctions” which are the two sides of the semiconductor material. When a current is introduced, one side will become slightly positive and the other side slightly negative. When a positive voltage is applied to the base, current starts flowing from the collector to the emitter.

The 2N3501 is most commonly found as an NPN type of BJT, which means it has an n-type material on the collector side and a p-type material on the emitter side. As current flows from the collector to the emitter it will also pass through the base, which is the control element of the transistor. The amount of current that can flow is determined by the base voltage and the current gain of the device. The higher the base voltage, the more current can flow. This current gain is often referred to as the β value of the transistor.

The 2N3501 is a versatile and reliable BJT which is used in applications from amplifiers and switches to inverters and clocks. Its two main application fields are linear amplification and switching and its working principle is based on the basic principles of most BJTs. In addition, it is capable of handling high voltage and power, making it a suitable choice for many electronics applications.

The specific data is subject to PDF, and the above content is for reference

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