2N3585 Allicdata Electronics
Allicdata Part #:

2N3585-ND

Manufacturer Part#:

2N3585

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS NPN 300V 2A TO-66
More Detail: Bipolar (BJT) Transistor NPN 300V 2A 10MHz 35W Thr...
DataSheet: 2N3585 datasheet2N3585 Datasheet/PDF
Quantity: 205
Stock 205Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V
Power - Max: 35W
Frequency - Transition: 10MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66
Description

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The 2N3585 is a bipolar junction transistor (BJT). It is classified as a single device, which means it has one main base, one main emitter, and one main collector. It is a low-power, NPN-type transistor that is often used in sine wave oscillators, preamplifier stages, and logic circuits. It can also be used to switch high-frequency signals, as well as to provide amplification.

In terms of the 2N3585\'s application field, the device is commonly used in audio and amplification applications. This includes amplifiers, preamps, audio power amplifiers, volume and tone control circuits, voice coil, and various switching circuits. Its feature of low noise operations makes it an ideal choice for many sensitive applications such as telephones, amplifiers, and hearing aids.

The 2N3585 transistor has several advantages compared to other bipolar transistors with similar characteristics. First, because of its low collector-emitter saturation voltage, it emits fewer losses in power. Besides, its noise figure and power gain capabilities make it a great choice for low-noise applications, such as telephones, ambiance and hearing aids. Lastly, its low-noise, metal-oxide-semiconductor (MOS) construction provides superior protection against static charges and other forms of interference.

The 2N3585 transistor works on the principle of a p-type material (the “base”) acting as a barrier between a negative-charge n-type material (the “emitter”) and a positive-charge n-type material (the “collector”) by applying a small electric current on the base. The NPN transistor acts as a switch or amplifier, depending on the circuit and type of switch used. When the base is triggered, negatively-charged free electrons move from the emitter to the collector (providing amplification in the circuit) and the transistor switches on and off depending on the current passing through it.

In summary, the 2N3585 is an NPN single transistor developed for low-power, audio, and switching applications. It is known for its low-noise operations, low collector-emitter saturation voltage, and low power gain. It works by applying a small electric current on the base, which turns on and off the transistor switch and provides amplification in the circuit. The 2N3585 transistor is well-suited for use in low-noise, sensitive applications such as preamps, telephones, hearing aids, and amplifiers.

The specific data is subject to PDF, and the above content is for reference

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