2N3507L

The 2N3507L is a bipolar junction transistor (BJT) designed for use in high-reliability and general-purpose amplifier and switching applications. With a collector and emitter-base breakdown voltages of 60 and 30 volts respectively, it is ideal for many signal and power amplifying applications that require high output or switch current and voltage capabilities.

The 2N3507L is particularly well-suited to applications such as audio, television sets, video signal switches, pulse generators, high-speed switching, and linear applications. The addition of a built-in variable resistor allows for precise current controls and the ability to adjust bias as necessary.

The working principle of the 2N3507L is based on the fact that when a current is passed through the collector base junction of a BJT, the current induced in the emitter-base junction creates a voltage across it, called the base-emitter voltage. The 2N3507L works by allowing electrons to flow from the collector to the emitter through the base – this happens when the base voltage is higher than the emitter voltage. Electrons are also pulled from the emitter to the collector when the base-emitter junction is reverse biased. This results in amplification of the input signal.

The 2N3507L is an NPN bipolar junction transistor (BJT) with three terminals: the emitter, the collector and the base. It is an enhancement-mode transistor, meaning that it does not need a separate power supply to operate. The emitter and the collector are located in the middle of the device and the base is at the edge, surrounding the other two terminals. The device has a maximum collector current of 500 mA, and a maximum collector-emitter voltage of 60 V. It is rated for a power dissipation of 500 mW, and a maximum junction temperature of 125°C.

To use the 2N3507L, an external bias resistor is typically employed to set up the correct base voltage for the desired level of current through the transistor. The base voltage can be adjusted by changing the resistance value provided by the bias resistor. Additionally, the 2N3507L can be used in conjunction with an NPN driver transistor to increase the gain achieved by the device.

The 2N3507L is a versatile and reliable transistor, suitable for many switching, power and amplifier applications. With its high-voltage ratings, high output current and high power dissipation, the 2N3507L is a great choice for any application requiring a reliable, high-performance transistor.