2SB315A-CM800DZ-34H

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Power management integrated circuit (PMIC) has become an integral part of modern power management systems. It contains a set of integrated circuits for managing the power supply to various components in circuit. PMIC- Gate Drivers are used to control power MOSFET and IGBT switching. They provide signals for the gate openings, turn-on, extending the driving capability and level-shifting to protect IGBT from the voltage in a power management applications.

The 2SB315A-CM800DZ-34H is an integrated PMIC-Gate Driver, manufactured by Sanken Semiconductor. It features low operation voltage of 8V, low terminal on-resistance of 0.48ohm, low threshold voltage of 2.7V, low operating temperature of -25°C to 85°C, and low switching power dissipation of 450mW. This chip is highly integrated and includes all the necessary gate drive components, allowing for easy design and component savings.

Application Fields

The 2SB315A-CM800DZ-34H is a versatile PMIC-Gate Driver that can be used in a variety of power management applications such as SMPS and DC-DC converters, solar power inverters, AC/DC and DC/DC switching power supplies, LED lighting, electric vehicles, and wind power systems.

The chip has a large driving capability, low on-state voltage drop and low switching power dissipation making it suitable for numerous high power switching applications. It is also suitable for applications that require fast switching, optimum efficiency and space saving solutions, because of its low operating voltage and integrated features.

Working Principle

The 2SB315A-CM800DZ-34H, being an integrated PMIC- Gate Driver, consists of two transistors and two voltage level shifting circuits. It is a single-chip driver with built-in circuitry for voltage level shifting, leading to improved noise immunity, driving performance and efficiency.

One of the transistors (drive transistor) receives power from a high level logic control signal to drive the gate of the power MOSFET or IGBT. The other transistor (Sense transistor) is used to sense the power MOSFET or IGBT, which is connected between the emitter of the sense transistor and source of the power transistor. When the voltage on the sense transistor is close to the lower threshold voltage, the output of the drive transistor turns off; and when it’s above the upper threshold voltage, the output of the drive transistor turns on.

The two voltage level shifting circuits, consisting of a resistive divider network and transistors, are used to control the gate switching threshold of the power MOSFET. The lower gate switching threshold is set by the resistive divider, where the current level can be adjusted with different resistor values. The upper gate switching threshold is set by the voltage level shifting circuit, with the gate driver having an adjustable upper base-emitter voltage.

The 2SB315A-CM800DZ-34H also provides integrated protection features such as burst protection and over temperature protection. The burst protection feature provides a slow turn-on signal driving the gate of the power MOSFET/IGBT, thus reducing the switching noise and stress. The over temperature protection feature is achieved by limiting the source current to the drive transistor and further improving the power dissipation.

Conclusion

The 2SB315A-CM800DZ-34H is an integrated PMIC-Gate Driver with low operating voltage, low on-state voltage drop and high driving capability, making it a suitable choice for power management applications. With its integrated features and protection features, the chip provides high efficiency and improved noise immunity while reducing the switching noise and stress.

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