2SB315B-2MBI800VT-170E

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2SB315B-2MBI800VT-170E application field and working principle

2SB315B-2MBI800VT-170E is a voltage driven insulated gate bipolar transistor (IGBT) driver which belongs to the Power Management Integal Control (PMIC) - Gate Drivers family of products. Specifically, it is designed for driving IGBTs with high current, comparability and reliability in applications such as welding machines, induction heating, traction and battery powered equipment.

The 2SB315B-2MBI800VT-170E provides both a high-side and low-side driver with a wide range of compatible IGBTs, making it highly customizable for different requirements. Its features also include a high current sink capability, high output voltage rating of 800V and low EMI/RFI behaviour.

The working principle behind the 2SB315B-2MBI800VT-170E is based on a combination of linear and non-linear components. The linear components such as MOSFETs and IGBTs are used to provide a constant voltage supply to the driver circuitry. This voltage is then used to enable the non-linear components such as gate drivers and transistors to enable the gate driving of the IGBTs. Finally, the resulting gate driver control signals will activate and control the IGBT by allowing and blocking current in its emitter to collector path.

All these features and technologies come together in the 2SB315B-2MBI800VT-170E making it a highly robust, reliable and controllable gate driver for IGBTs. It can be used in a wide range of applications from welding to induction heating and from traction to battery powered equipment. This flexibility, along with its high power rating and performance make it an ideal solution for a range of applications.

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