2SC0108T2F1-17

PMIC - Gate Drivers

The 2SC0108T2F1-17 is a MOSFET gate driver used in power management integrated circuits (PMIC). It is specifically used to drive a power MOSFET or an IGBT, in order to control the flow of power within a wide-input voltage range of up to 36 VDC. It has a maximum operating temperature of +125C, and an operating current of up to 200mA, making it suitable for providing power control in a variety of applications.

Application Field

The 2SC0108T2F1-17 is used in a wide range of application fields, including power management, automotive, industrial, medical, and consumer electronics. It is particularly useful for driving the power MOSFETs and IGBTs in Switching power supplies, DC/DC converters, and Variable Frequency Drives (VFD). It is also used in motor control including brushless DC motor, servo motor and other three phase motors. In addition, the 2SC0108T2F1-17 is used in mobile power source, battery charger, adjustable voltage power supply and solar power source.

Working Principle

The 2SC0108T2F1-17 gate driver uses a CMOS process to control the signal input output between two MOSFETs or IGBTs. It consists of two parts, the gate driver circuit and the signal input circuit. The signal input circuit receives the voltage input and provides a signal output to the gate driver circuit. The gate driver circuit then uses the signal output to control the gate pulse signal and/or the switching timing. This allows the output power to be adjusted and controlled by the driver.

The 2SC0108T2F1-17 has a fast switching speed of 20ns, and a wide input voltage range of 5V to 36V. It also has the ability to provide a high drive current of up to 200mA. The driver offers short circuit protection, overvoltage protection, undervoltage protection and thermal protection. The driver also has an adjustable soft-start and adjustable overcurrent protection, making it suitable for a variety of applications.

The 2SC0108T2F1-17 is a very versatile MOSFET/IGBT gate driver, suitable for a wide range of applications. It is capable of driving the gate of power MOSFETs and IGBTs, allowing them to be controlled accurately, efficiently and safely.