2SC0108T2G0-17

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Power MOSFET and IGBT gate drivers are the key components used to control power switches in electric and hybrid vehicle applications. 2SC0108T2G0-17, a Gate Driver IC from ON Semiconductor, is an award-winning product that provide unmatched performance, in terms of productivity, reliability, and cost-effectiveness. This Gate Driver IC utilizes patented technology and provide comprehensive solutions for controlling and driving high-speed switching of power stages for improved system efficiency and timeline performance in automotive applications.

The 2SC0108T2G0-17 is optimized for driving low-side and high-side Power MOSFETs and IGBTs with a peak output current of up to 3.2A. The IC features an integrated inverter and two isolated,impedance controlled drive circuits, providing enhanced reliability by increasing the pulse width modulation(PWM) output depth and simplifying the PCBA design. The integrated inverter consists of two half-bridge drivers, which provide 1.8A of peak output swing current, and has high switching frequency of upto 1.5MHz. The integrated output control logic monitors both the PWM waveforms and the gate voltage waveforms, and provides an accurate current sensing feedback loop, allowing the power stage to be optimally controlled.

The 2SC0108T2G0-17 also features failsafe and alternate drive functions, which provide improved over-voltage protection and increased safety performance. The failsafe function senses when a PWM waveform has stopped and provides a low current output, enabling the system to safely power down. The alternate drive feature allows the user to select between two drive inputs, making it ideal for use in dual-channel applications, such as solar inverters.

This Gate Driver IC also provides constant output current control, improving power efficiency and extending the lifetime of the power stage. In addition, the 2SC0108T2G0-17 provides fault-tolerant design features, such as over-voltage protection, over-current protection, under-voltage protection, and die temperature protection, ensuring the safe and reliable operation of the power stages. The device is also equipped with an external reset pin, which can be disabled or enabled using a low voltage signal.

The 2SC0108T2G0-17 is available in a hermetically sealed, surface mount package, making it suitable for operation in harsh environments. It also has an integrated 3V low-side driver and low-side logic for reduced component count, minimizing the need for external components. The device provides a low-EMI system operation, preventing interference from other electronic components, and is suitable for voltage ranges from 6V to 48V. The Gate Driver IC is rated for operation from -40°C to +125°C temperatures, making it suitable for automotive application.

In conclusion, the 2SC0108T2G0-17 is an innovative, award-winning power supply Gate Driver IC from ON Semiconductor. This device offers excellent performance, high reliability, and cost-effectiveness for driving low-side and high-side Power MOSFETs and IGBTs, enabling improved system efficiency, long-term reliability, and safety for automotive applications. The device also provides advanced protection features, allowing it to operate safely in harsh environmental conditions.

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