2SK879-GR(TE85L,F) Allicdata Electronics
Allicdata Part #:

2SK879-GR(TE85LF)TR-ND

Manufacturer Part#:

2SK879-GR(TE85L,F)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: JFET N-CH 0.1W USM
More Detail: JFET N-Channel 100mW Surface Mount USM
DataSheet: 2SK879-GR(TE85L,F) datasheet2SK879-GR(TE85L,F) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V
Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Power - Max: 100mW
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM
Description

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JFETs, or junction field effect transistors, are a type of transistor that uses an electric field instead of a gate current to control the output current of the device. The 2SK879-GR(TE85L,F) is a special variety of JFETs known as a depletion-mode type since its current is affected by the amount of charge on the gate.

The 2SK879-GR(TE85L,F) has a variety of applications including voltage controlled resistors (VCRs), high-precision current sources, audio amplifiers, instrumentation amplifiers, and active components for temperature sensors. It is frequently used as an input stage in op-amp and is also used for gain control in power supplies. The device can be used in the forward and reverse active modes with a stable operating point.

The 2SK879-GR(TE85L,F) has a relatively low noise level, which makes it ideal for applications such as precision current sources. Additionally, the device is notable for its low output resistance and its good thermal stability.

In terms of working principle, the 2SK879-GR(TE85L,F) uses an electric field to control the flow of current. The gate voltage is applied to the drain side, which creates a two-voltage field between the source and drain regions. This field attracts the majority carriers, electrons or holes, depending on the type of material used in the device, thus providing the current control.

The 2SK879-GR(TE85L,F) uses a depletion-type system, meaning it will go from an open mode, which allows current to flow through the device, to a closed mode, where the current is cut off. This is accomplished by varying the voltage on the gate, which changes the electric field and the amount of charge on the gate.

The 2SK879-GR(TE85L,F) has a variety of advantages including its low power mechanism, high-frequency characteristics, and its ability to be used in a wide range of temperatures. Additionally, the device\'s low noise makes it ideal for applications in sensitive instruments.

In conclusion, the 2SK879-GR(TE85L,F) is a type of junction field effect transistor (JFET) that uses an electric field to control the output current. The device uses a depletion type system and is suitable for applications such as voltage controlled resistors, high-precision current sources, audio amplifiers, and instrumentation amplifiers. The device has a low noise level, low power mechanism, and high-frequency characteristics. It is also thermally stable, making it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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