2SK880-Y(TE85L,F) Discrete Semiconductor Products |
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Allicdata Part #: | 2SK880-Y(TE85LF)TR-ND |
Manufacturer Part#: |
2SK880-Y(TE85L,F) |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | JFET N-CH 50V 0.1W USM |
More Detail: | JFET N-Channel 50V 100mW Surface Mount USM |
DataSheet: | 2SK880-Y(TE85L,F) Datasheet/PDF |
Quantity: | 39000 |
3000 +: | $ 0.14374 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 50V |
Current - Drain (Idss) @ Vds (Vgs=0): | 1.2mA @ 10V |
Voltage - Cutoff (VGS off) @ Id: | 1.5V @ 100nA |
Input Capacitance (Ciss) (Max) @ Vds: | 13pF @ 10V |
Power - Max: | 100mW |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | USM |
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A JFET (junction field-effect transistor) is a type of transistor that utilizes an electric field to control the outlet current flow. The 2SK880-Y(TE85L,F) is a N-channel junction gate field-effect transistor that has a high input impedance, allowing it to be used for audio frequency, video frequency, radio frequency, and power applications.
The 2SK880-Y(TE85L,F) is a three-pin device and provides a high-input impedance and low-noise performance. It is well-suited for a variety of commercial and industrial applications, including high-frequency switching, low-noise amplifiers, gate control for analog circuits, and many more.
The 2SK880-Y(TE85L,F) consists of two sections: a source-gate channel and a drain-isolation channel. The source-gate channel is where the input signal is fed into and influences the threshold voltage of the drain-isolation channel. The drain-isolation channel is then regulated by the threshold voltage of the source-gate channel, which controls the flow of electrons to the drain.
The source-gate channel acts as a resistor-based device which is able to control the overall current flow. The actual exact value of this resistor is determined by the DC bias current applied to it. As the voltage of the source-gate channel increases, the resistance of this resistor will also increase, resulting in less current flow. The drain-isolation channel has no external voltage applied, which means that its resistance does not vary.
The 2SK880-Y(TE85L,F) is able to operate at a wide range of frequencies thanks to its high input impedance which can be adjusted by changing the applied DC bias current. Its low noise performance makes it particularly suitable for radio frequency applications. Its ability to operate at medium to high voltages makes it ideal for medium power operation.
The 2SK880-Y(TE85L,F) is an excellent choice for commercial and industrial applications that require medium to high power operation and low-noise performance. It is used in a variety of industries, including telecommunications, automotive, audio, and video. It is an attractive choice for many applications due to its low noise performance, wide operating frequency range, and high input impedance.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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2SK880-Y(TE85L,F) | Toshiba Semi... | 0.16 $ | 39000 | JFET N-CH 50V 0.1W USMJFE... |
2SK880GRTE85LF | Toshiba Semi... | 0.0 $ | 1000 | JFET N-CH 50V 0.1W USMJFE... |
2SK880-BL(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | JFET N-CH 50V 0.1W USMJFE... |
2SK879-GR(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | JFET N-CH 0.1W USMJFET N-... |
2SK879-Y(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | JFET N-CH 0.1W USMJFET N-... |
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