2SK880-BL(TE85L,F) Allicdata Electronics
Allicdata Part #:

2SK880-BL(TE85LF)TR-ND

Manufacturer Part#:

2SK880-BL(TE85L,F)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: JFET N-CH 50V 0.1W USM
More Detail: JFET N-Channel 50V 100mW Surface Mount SC-70
DataSheet: 2SK880-BL(TE85L,F) datasheet2SK880-BL(TE85L,F) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 50V
Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
Voltage - Cutoff (VGS off) @ Id: 1.5V @ 100nA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Power - Max: 100mW
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors are used for various purposes in both digital and analog circuits. JFETs, or Junction Field Effect Transistors, are one type of transistor used for various purpose. The 2SK880-BL(TE85L,F) transistor is a popular device for many circuit designs. This article will discuss the 2SK880-BL(TE85L,F) transistor’s application field and working principle.

JFETs uses physical property of semiconductor to control current flow. A JFET transistor consists of three regions: Source, Drain and Channel. The Source is where the input current is applied. The Drain is where the output current is produced. The Channel lies between Source and Drain. The Channel is heavily doped P-type or N-type semiconductor material which is controlled by a Gate voltage. A P-channel JFET has P-type channel and an N-channel JFET has an N-type channel. The current flow between Source and Drain is controlled by a Gate voltage and the current flow is inversely proportional to the Gate voltage.

The main applications of the 2SK880-BL(TE85L,F) transistor are audio pre-amplifiers, input amplifiers and digital switching. This transistor is a P-Channel JFET with a depletion mode substitute for a 2N5458. It has a lower maximum Gate-Source voltage and also a lower Total Gate Charge. The main physical characteristics of the 2SK880-BL(TE85L,F) transistor are as follows: Drain-Source Breakdown Voltage (Vds) is 25V, Gate-Source Breakdown Voltage (Vgs) is 6V, Drain-Source On Resistance (Rds) is 5.4 Ohm, On-State Drain Current (Id) is 11mA and maximum Operating Temperature (Tj) is 150°C.

The 2SK880-BL(TE85L,F) transistor can be used in various applications with the help of these physical characteristics. This transistor is mainly used as an audio preamplifier, input amplifier, and digital control. For audio preamplifier application, this transistor can be used in both FM radio receivers and TV receivers. It’s used for providing gain to the audio signals and also for providing resistance against the interference signals. In input amplifier application, this transistor can be used for boosting up the input signal level. For digital control application, this transistor can be used for controlling signals level and switching them on and off.

The working principle of the 2SK880-BL(TE85L,F) transistor is based on its Gate-Source voltage. When the Gate voltage is larger than zero, the P-type channel is opened and the current begins to flow through the channel. As the Gate voltage increases, the current flow through the channel also increases up to the maximum rated current. When the Gate voltage is lower than zero, the P-type channel is closed and the current flow is decreased. The Gate-Source voltage can also be used to switch the transistor state from the On-state to the Off-state. When the Gate voltage is lower than the threshold point, the P-type channel is closed and the current flow is decreased, which results in the transistor state changing from On-state to Off-state.

In conclusion, the 2SK880-BL(TE85L,F) transistor is a wide used device for various circuit designs. It is a P-Channel JFET and it is mainly used as an audio preamplifier, input amplifier and digital control. The main physical characteristics of this transistor are its Drain-Source breakdown voltage, Gate-Source breakdown voltage, Drain-Source on resistance, on-state drain current and maximum operating temperature. The working principle of the 2SK880-BL(TE85L,F) transistor is based on the Gate-Source voltage which controls the current flow through the P-type channel.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "2SK8" Included word is 5
Part Number Manufacturer Price Quantity Description
2SK880-Y(TE85L,F) Toshiba Semi... 0.16 $ 39000 JFET N-CH 50V 0.1W USMJFE...
2SK880GRTE85LF Toshiba Semi... 0.0 $ 1000 JFET N-CH 50V 0.1W USMJFE...
2SK880-BL(TE85L,F) Toshiba Semi... 0.0 $ 1000 JFET N-CH 50V 0.1W USMJFE...
2SK879-GR(TE85L,F) Toshiba Semi... 0.0 $ 1000 JFET N-CH 0.1W USMJFET N-...
2SK879-Y(TE85L,F) Toshiba Semi... 0.0 $ 1000 JFET N-CH 0.1W USMJFET N-...
Latest Products
J3A080YXS/T0BY4AG0

TRANSISTOR JFET 8PLLCCTRANSISTOR JFET 8P...

J3A080YXS/T0BY4AG0 Allicdata Electronics
J3A040YXS/T0BY4571

TRANSISTOR JFET 8PLLCCTRANSISTOR JFET 8P...

J3A040YXS/T0BY4571 Allicdata Electronics
J3A012YXS/T0BY4551

TRANSISTOR JFET 8PLLCCTRANSISTOR JFET 8P...

J3A012YXS/T0BY4551 Allicdata Electronics
J2A080GX0/T0BG295,

TRANSISTOR JFET 8PLLCCTRANSISTOR JFET 8P...

J2A080GX0/T0BG295, Allicdata Electronics
J2A040YXS/T0BY424,

TRANSISTOR JFET 8PLLCCTRANSISTOR JFET 8P...

J2A040YXS/T0BY424, Allicdata Electronics
J2A020YXS/T0BY425,

TRANSISTOR JFET 8PLLCCTRANSISTOR JFET 8P...

J2A020YXS/T0BY425, Allicdata Electronics