| Allicdata Part #: | 30EPF06-ND |
| Manufacturer Part#: |
30EPF06 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 600V 30A TO247AC |
| More Detail: | Diode Standard 600V 30A Through Hole TO-247AC Modi... |
| DataSheet: | 30EPF06 Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 600V |
| Current - Average Rectified (Io): | 30A |
| Voltage - Forward (Vf) (Max) @ If: | 1.41V @ 30A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 160ns |
| Current - Reverse Leakage @ Vr: | 100µA @ 600V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Through Hole |
| Package / Case: | TO-247-2 |
| Supplier Device Package: | TO-247AC Modified |
| Operating Temperature - Junction: | -40°C ~ 150°C |
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The 30EPF06 is a silicon rectifier diode that provides a very efficient and cost effective solution for a variety of applications. This component is widely used in both industrial and consumer electronics, and has many advantages over traditional rectifiers.
The 30EPF06 is a single-die, hermetically sealed component that features a low forward voltage drop and a low-profile package. This component is capable of withstanding high temperatures and levels of vibration due to its high reliability and durability. Additionally, the device features reverse-blocking capability, which means that it is capable of blocking current in the reverse direction.
The 30EPF06 is specifically designed for use in AC-to-DC power adapters, power supplies, automotive electronics, and other power management applications. It is also well suited for use in DC-DC converters, switching regulators, lighting, remote control circuits, and general rectification. This device has a low-power dissipation rating, which makes it an ideal choice for power-limited applications.
The 30EPF06 is designed to meet the needs of high-temperature applications, as it operates in temperatures ranging from -50°C to +125°C. This component also offers low leakage current, high surge capabilities, and low junction capacitance, providing improved circuit performance.
The 30EPF06 features a recessed cathode construction, which makes it highly resistant to thermal runaway and junction temperature. This enhances both reliability and performance. Additionally, the device has a compact packaging design that allows it to be easily mounted on printed circuit boards.
The working principle of the 30EPF06 is based on an avalanche breakdown effect. This effect occurs when the voltage level exceeds a certain threshold, which is called the breakdown voltage. When the breakdown voltage is exceeded, an electric current will flow through the diode. This current then activates the avalanche effect, which results in the electrical current flowing through the diode in one direction only.
The 30EPF06 is an effective and reliable solution for applications that require current rectification. It is highly durable, resistant to temperature and vibration, and offers low forward voltage drop. Additionally, it features high surge capabilities, low leakage current, and low junction capacitance. This makes it suitable for use in both industrial and consumer electronics applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| SIT9005ACU2D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| VS-30EPF10PBF | Vishay Semic... | 2.72 $ | 1000 | DIODE GEN PURP 1KV 30A TO... |
| VS-30EPF06PBF | Vishay Semic... | 3.19 $ | 3090 | DIODE GEN PURP 600V 30A T... |
| SIT9005ACA2D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACE1D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACT2G-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| VS-30EPF10-M3 | Vishay Semic... | 4.14 $ | 1000 | DIODE GEN PURP 1KV 30A TO... |
| SIT9005ACA1D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACB2D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACU2H-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| 30EPF02 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 30A T... |
| 30EPH03 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 300V 30A T... |
| SIT9005ACR2H-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| VS-30EPU12L-N3 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1.2KV 30A ... |
| SIT9005ACL1D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACL2H-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACB1G-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| VS-30EPF02-M3 | Vishay Semic... | 3.62 $ | 1000 | DIODE GEN PURP 200V 30A T... |
| SIT9005ACT1D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACR1D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACU1G-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACU2G-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACA2H-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACA2G-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| VS-30EPF06-M3 | Vishay Semic... | 4.1 $ | 1000 | DIODE GEN PURP 600V 30A T... |
| SIT9005ACE1H-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| VS-30EPH03-N3 | Vishay Semic... | 3.07 $ | 1000 | DIODE GEN PURP 300V 30A T... |
| SIT9005ACR1H-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| VS-30EPF12PBF | Vishay Semic... | 3.88 $ | 437 | DIODE GEN PURP 1.2KV 30A ... |
| SIT9005ACB1D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACR1G-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACT2D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACT2H-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| SIT9005ACE2D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| VS-30EPF04PBF | Vishay Semic... | 2.21 $ | 1000 | DIODE GEN PURP 400V 30A T... |
| 30EPF06 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 30A T... |
| SIT9005ACE2G-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
| VS-30EPF02PBF | Vishay Semic... | 2.21 $ | 1000 | DIODE GEN PURP 200V 30A T... |
| VS-30EPF12-M3 | Vishay Semic... | 5.61 $ | 490 | DIODE GEN PURP 1.2KV 30A ... |
| SIT9005ACR2D-30EP | SiTime | 4.35 $ | 1000 | OSC MEMSSSXO LVCMOS 1MHz ... |
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30EPF06 Datasheet/PDF