30WQ04FN

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• Introduction: The 30WQ04FN is a trench-gate MOSFET designed for high-side load switch applications such as load switch and circuit breaker. It features low on-resistance to reduce conduction losses, fast switching times for quick operation, and very low leakage current.
• Application fields: The 30WQ04FN is generally used in power supplies, motor control systems, battery management systems and DC-DC converters. It provides excellent linearity and efficiency when used to control switch shutoff and switching times in high current circuits. Additionally, it can be used for load-switching applications such as general load switch, high power load switch, ultra-high power load switch applications and low leakage current-power switches.
• Working Principle: The 30WQ04FN works on a principle of a dual-gate MOSFET. The different gate voltages create a logic-controlled current path based upon voltage differences between the gate and the source. This principle allows the MOSFET to switch from high-voltage low-side switch to low-voltage high-side switch without changing the logic level of the gate drive. Therefore, the controlling logic of the 30WQ04FN is able to control the high-side switch by applying a low voltage to the source of the FET, while the low-side switch is controlled by applying a high voltage to the gate. Additionally, the MOSFET can be used in either direction, forward or reverse polarity, and the logic of the controlling logic can be changed by changing the voltages of the source and gate.

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