3EZ51D5E3/TR12 Allicdata Electronics
Allicdata Part #:

3EZ51D5E3/TR12-ND

Manufacturer Part#:

3EZ51D5E3/TR12

Price: $ 0.50
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 51V 3W DO204AL
More Detail: Zener Diode 51V 3W ±5% Through Hole DO-204AL (DO-4...
DataSheet: 3EZ51D5E3/TR12 datasheet3EZ51D5E3/TR12 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.44651
Stock 1000Can Ship Immediately
$ 0.5
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 51V
Tolerance: ±5%
Power - Max: 3W
Impedance (Max) (Zzt): 48 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 38.8V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 3EZ51
Description

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Diodes are components which are used to control the flow of current, and are largely categorized based on their functionality. Zener diode as a type of diode, is designed to operate in reverse bias, meaning the diode has a reverse voltage applied across it. This reverse voltage allows the diode to limit the maximum voltage or limit the flow of the current, based on its design. One example of a zener diode is 3EZ51D5E3/TR12.

3EZ51D5E3/TR12 diodes, as a part of the Zener series, offer low noise, low capacitance and low capacitance profile, making them ideal for RF and high-frequency electronic applications. Its working principle is based on the reverse biasing across the diode, which allows it to limit the maximum voltage or limit the flow of current in the opposite direction, according to its design. This allows it to be used in various applications including power conversion, switching, overvoltage protection, noise suppression, and EMI/RFI filtering.

The 3EZ51D5E3/TR12 diode exhibits consistent and reliable performance in a wide range of current and voltage conditions, making it ideal for use in a variety of applications such as switching, noise suppression, and RF control. As a result, it is widely used in portable electronic devices, medical, industrial, computing and communication applications. Also, owing to its high dielectric strength, it can be used to protect circuit components from high voltage conditions, thus eliminating the risk of overvoltage damage.

The working principle of the 3EZ51D5E3/TR12 diode is relatively simple. When the reverse voltage is applied, a certain amount of current starts to flow. This current is then limited by the zener voltage, which is the maximum allowable voltage across the diode. As the reverse voltage is increased further, the current through the diode continues to increase, until it reaches the maximum current, at which point the diode is said to be in the saturation region.

In addition to its use as an overvoltage protection device, the 3EZ51D5E3/TR12 diode can be used in a variety of applications due to its low noise, low capacitance, and low capacitance profile. It can be used in switching, noise suppression, EMI/RFI filtering, and power conversion. Moreover, it is also used in medical equipment, such as computed tomography scans, and in circuits where high-frequency noise is encountered.

3EZ51D5E3/TR12 diodes are widely used in various applications due to their consistent and reliable performance and their voltage and current handling capabilities. They offer excellent noise suppression and EMI/RFI filtering capabilities, as well as low capacitance and excellent temperature characteristics. These components are used for power conversion, switching, overvoltage protection, noise suppression, and EMI/RFI filtering.

The specific data is subject to PDF, and the above content is for reference

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