3EZ56D2/TR12

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	56V
Tolerance:	±2%
Power - Max:	3W
Impedance (Max) (Zzt):	50 Ohms
Current - Reverse Leakage @ Vr:	500nA @ 42.6V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-204AL (DO-41)
Base Part Number:	3EZ56

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Introduction

A 3EZ56D2/TR12 diode is a single Zener diode with a high-power rating. It is available in different formats for a variety of applications. This article provides an overview of the 3EZ56D2/TR12 application field, working principle and its physical characteristics.

Application Field

The 3EZ56D2/TR12 is designed for applications that require high-power Zener diodes. This high-power rating is best suited for applications where power is a primary concern. Typical applications include voltage regulation, clamping, noise suppression, and test equipment. This type of diode can also be used as a power source in small circuits and in radio-frequency applications. The 3EZ56D2/TR12 can also be used as a protection device in higher voltage applications. In this role it is able to provide reverse-voltage protection, over-current protection and surge protection. This is especially useful in applications where the voltage could exceed the operating conditions of other components of the circuit.

Working Principle

The 3EZ56D2/TR12 diode operates based on the principle of a PN junction. When voltage is applied to a PN junction, electrical current travels from the P region (positive side) to the N region (negative side). This current is known as the Zener current. The 3EZ56D2/TR12 is designed so that when the voltage across the diode reaches a certain level, the current flow increases exponentially. This phenomenon is known as the Zener breakdown. The breakdown voltage of the 3EZ56D2/TR12 is determined by its physical design. The breakdown voltage is specified on the data sheet at a given temperature and applied voltage. The physical characteristics of the diode, such as the thickness, junction area and device size, determine the breakdown voltage. Additionally, the breakdown voltage of the 3EZ56D2/TR12 may change with temperature as the device heats up.

Physical Characteristics

The 3EZ56D2/TR12 diode has several physical characteristics that make it suitable for a variety of applications. It has a maximum power rating of 1.5 Watts and can operate at temperatures ranging from -40 to +125 degrees Celsius. It is available in a variety of packages, such as the TO-220, TO-252 and the 1.6x1.6mm SOT-163 packages. The package size and weight are designed to be convenient for integration into circuit boards and other electrical assemblies. The 3EZ56D2/TR12 diode also has a high current carrying capacity, with rated currents between 1 to 5 amps. This is a suitable current rating for a variety of applications, including both low- and high-power applications. Additionally, the diode has an enhanced heat dissipation design that allows it to remain stable even at high temperatures.

Conclusion

The 3EZ56D2/TR12 is an high-power Zener diode with a variety of useful characteristics. It is designed for a variety of applications, from voltage regulation to surge protection. Additionally, it has an enhanced heat dissipation design and a variety of packages for convenient integration in circuits. With its high power rating and various features, the 3EZ56D2/TR12 diode is a great choice for a variety of applications.

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