5KP75A-E3/54 Allicdata Electronics
Allicdata Part #:

5KP75A-E3/54GITR-ND

Manufacturer Part#:

5KP75A-E3/54

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 75V 121V P600
More Detail: N/A
DataSheet: 5KP75A-E3/54 datasheet5KP75A-E3/54 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Voltage - Clamping (Max) @ Ipp: 121V
Supplier Device Package: P600
Package / Case: P600, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Current - Peak Pulse (10/1000µs): 41.3A
Series: TransZorb®
Voltage - Breakdown (Min): 83.3V
Voltage - Reverse Standoff (Typ): 75V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS - Diodes are an important component used in many electronic devices. The 5KP75A-E3/54 is a popular TVS diode that offers many advantages over traditional silicon diode solutions. This particular diode utilizes a reverse-breakdown technology that provides superior protection against electrical surges and overvoltage transients. In this article, we will be discussing the application field and working principle of the 5KP75A-E3/54 TVS diode.

One of the main applications of the 5KP75A-E3/54 is in the protection of electrical components and circuits from transient overvoltage spikes. These spikes are typically caused by electrostatic discharge, lightning, and other sources of electrical interference. The diode can provide protection against these transients by clamping the voltage at a safe level. This prevents components and circuits from being damaged. Additionally, the diode can also be used as a voltage regulator, providing a stable source of power to components and circuits.

The working principle of the 5KP75A-E3/54 is based on reverse-breakdown technology. This involves the creation of a non-linear voltage-current relationship, which is a feature of most semiconductor devices. As the voltage across the diode increases, the current begins to drop. This creates a "clamping" effect which limits the voltage rise above the reverse-breakdown voltage. This prevents the voltage across the diode from reaching dangerous or damaging levels.

The 5KP75A-E3/54 provides many benefits over traditional silicon diode solutions. First, the diode has higher surge capability and lower clamping voltage, allowing it to protect components and circuits from larger transients. Additionally, the diode also has a low leakage current which ensures a more reliable operation. Finally, the diode has a high breakdown voltage which ensures that it can handle higher voltages.

In conclusion, the 5KP75A-E3/54 TVS diode is a versatile and reliable component that offers superior protection from transient overvoltage spikes. This diode utilizes reverse-breakdown technology to create a non-linear voltage-current relationship which clamps the voltages at a safe level. Additionally, the diode also provides high surge capabilities and high breakdown voltages, allowing it to handle larger transients and higher voltages. For these reasons, the 5KP75A-E3/54 is a popular component for a variety of applications requiring reliable voltage spike protection.

The specific data is subject to PDF, and the above content is for reference

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