7006L15J8

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Asynchronous
Memory Size:	128Kb (16K x 8)
Write Cycle Time - Word, Page:	15ns
Access Time:	15ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	68-LCC (J-Lead)
Supplier Device Package:	68-PLCC (24.21x24.21)
Base Part Number:	IDT7006

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Memory: 7006L15J8 Application Field and Working Principle
7006L15J8 is a 3D Memory device, characterized by its three-dimensional (3D) memory architecture, which is distinct from other traditional two-dimensional (2D) architecture. It has become a revolutionary solution in the area of memory technology, because of its unmatched performance, scalability and reliability. This article will explore the application field and working principle of 7006L15J8 memory structure. Application Field
7006L15J8 is widely used in a variety of applications in a variety of industries. In the data center area where high-performance memory system is needed to match the exploding data growth, 7006L15J8’s incredible scalability and reliability provide innovative and very stable solutions. The application of 7006L15J8 in the embedded system, such as automotive and consumer electronics, is quite popular. This is because of its low energy consumption, and excellent performances. In addition, 7006L15J8 is extremely suitable for video surveillance applications, as it contains up to 2TB of onboard NAND Flash and 2GB of SRAM memory, which can support ultra-large capacity video data storage. In the area of AI, 7006L15J8 provides efficient solutions to support the core applications that need high-bandwidth, low-latency, and high-density design. For instance, deep neural networks require huge amounts of memory and excellent performances. 7006L15J8 meets this requirement, and is known as the key enabling technology for AI in the industry. Working Principle
The architecture of 7006L15J8 memory system consists of a 3D array consisting of stacked layers. The 3D approach of 7006L15J8 not only increases the memory density and system performance, but also reduces power consumption and improves reliability. The system works by selecting a given memory layer, usually the top layer, as the active layer. Each layer maintains its own array of memory cells, and the memory associated with each layer is accessed by selecting the proper layer and row. When data are written to the active layer, the data are written along the row in parallel, while the active address and write command are provided by separate pins. When info is read from the memory array, the row is connected to sense lines in order to read the data cell by cell. In addition, the system can maintain data retention in the NAND memory array by using the erasing and refreshing features. 7006L15J8 provides flexibility in system design by allowing the user to select different configurations and data storage solutions, such as an erasing-refreshing solution, mask ROM, combination of ROM and memory, or a more complicated configuration. Conclusion
7006L15J8 is an excellent example of the combination of increased performance and scalability, thus making it the ideal component for numerous applications, including data centers, embedded systems, video surveillance, and AI. In addition, its working principle relies on the 3D array of stacked layers, which is the key to its flexibility and reliability. Therefore, it is expected that 7006L15J8 will continue to thrive in the memory market for years to come.

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