Allicdata Part #: | 7006S17PF8-ND |
Manufacturer Part#: |
7006S17PF8 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 128K PARALLEL 64TQFP |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 128Kb (16... |
DataSheet: | 7006S17PF8 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 128Kb (16K x 8) |
Write Cycle Time - Word, Page: | 17ns |
Access Time: | 17ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LQFP |
Supplier Device Package: | 64-TQFP (14x14) |
Base Part Number: | IDT7006 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The memory field is an area of research and technology that has seen immense development in recent years. One of the most recently developed memory technologies is the 7006S17 PF8 application field and working principle. This technology is designed to provide higher performance than many other popular memory technologies, such as SDRAM and DDR3. The 7006S17 PF8 utilizes non-volatile memory, allowing it to store data even when power is removed. This makes it a great choice for applications such as embedded products, medical devices, and automotive electronics, where data must be retained to maintain system stability.
7006S17 PF8 works on the principle of electric-field assisted programming (Efap). This is a process wherein the programming voltage is applied to a region of non-volatile memory cells and a non-volatile memory cell is created. The programming voltage is controlled by special programming voltage control circuit, and can be varied to adjust parameters such as data retention time and data retention temperature.The electric field created is used to change the electric charges of the cell, thus resulting in a write or erase operation. The electric charges can also be manipulated to create higher bit density by adding multiple layers of memory cells into a single memory chip.
The 7006S17 PF8 is designed for use in embedded applications, medical devices, and automotive electronics. It is designed to increase system performance, as well as to reduce power consumption. One of the benefits of this memory is its fast write and read rates, resulting in improved performance in embedded and medical applications. Additionally, the use of Efap allows this memory to be highly scalable and to be easily customized for different applications. In automotive applications, the 7006S17 PF8 can be used to increase data storage capacity, as well as to provide data retention in the event of power failure.
The 7006S17 PF8 is a versatile memory technology that can be used in many applications. Its non-volatile nature allows it to maintain data even when power is removed, thus making it a great choice for embedded and automotive electronics. It also provides improved performance for medical and industrial applications, due to its high write and read rates. The use of Efap programming allows the memory to be highly scalable and easily customized for different applications, further increasing its usefulness.
The specific data is subject to PDF, and the above content is for reference
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