7025L25J8

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Asynchronous
Memory Size:	128Kb (8K x 16)
Write Cycle Time - Word, Page:	25ns
Access Time:	25ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	84-LCC (J-Lead)
Supplier Device Package:	84-PLCC (29.21x29.21)
Base Part Number:	IDT7025

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Memory - 7025L25J8 application field and working principle

The 7025L25J8 memory module is a type of integrated circuit memory that is used to store signals or data. It is a high-capacity static random access memory (H-SRAM) and is used in a wide variety of applications, from automotive to medical systems. The 7025L25J8 is designed to save and then recall stored data points quickly and reliably, and is optimized for power consumption and speed. In this article, we will discuss the application field of the 7025L25J8, its working principle and some of its features and benefits.The 7025L25J8 memory module is designed for use in high-density memory applications, such as in medical systems, industrial automation and robotics. The 7025L25J8 can store multiple data points simultaneously, making it an attractive option for applications where large amounts of data need to be saved and recalled quickly. It is also used for image processing applications, where its high-capacity storage makes it ideal for storing high resolution images.The 7025L25J8 memory module is also used in automotive applications, such as in navigation systems, control units and brake controllers, as well as in marine applications, such as for storing temperature and instrument readings. Its high-capacity storage and low power consumption make it an ideal solution for applications where there is a need for extensive data storage and fast recall.The 7025L25J8 memory module uses a static random access memory architecture (H-SRAM), which allows for the storage and retrieval of data points quickly and reliably. The H-SRAM consists of a two-dimensional array of transistors arranged in a horizontal and a vertical direction, forming a crossbar grid. Each cell in this grid is connected to two bit lines (BL and BLB) and two word lines (WL and WLB), and can store one bit of data. To store or retrieve data, the cell is activated by applying a voltage to an appropriate word line.The 7025L25J8 memory module also features ECC (Error Correction Code) functionalities, which can be used to detect and correct errors that might occur during the read or write operations. This increases the reliability of the data stored in the H-SRAM and guarantees its accuracy.The 7025L25J8 memory module is a high-capacity static random access memory (H-SRAM) with a wide range of applications. It is optimized for speed and power consumption and offers high reliability and accuracy through its ECC functionalities. It is ideally suited for applications where large amounts of data need to be stored and retrieved rapidly and reliably.

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