7025S45PFI8

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Asynchronous
Memory Size:	128Kb (8K x 16)
Write Cycle Time - Word, Page:	45ns
Access Time:	45ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	100-LQFP
Supplier Device Package:	100-TQFP (14x14)

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Memory: 7025S45PFI8 Application Field and Working PrincipleMemory technology has been a critical component of computer system architecture for over a century. Traditional memories, such as DRAM and SRAM, have been used for decades to store and retrieve data in an efficient and reliable way. However, in recent years, the need for higher memory capacities, faster access speeds, and improved energy efficiency have driven the development of novel memory technologies.One of the newest advancements in memory technology is the 7025S45PFI8 non-volatile RAM (NVRAM). This type of memory is specifically designed to offer fast and low-power performance compared to traditional volatile memory devices. It combines the performance of traditional volatile memory with the robustness of non-volatile flash memory technology. This makes it ideal for a wide range of applications, from mobile devices to high-end enterprise systems.The 7025S45PFI8 memory is based on NOR (Not-OR) flash technology, which uses a two-transistor memory architecture to store data. Unlike DRAM and SRAM, the two transistors in this type of device act as a single storage bit, allowing for significantly higher data densities than traditional volatile memory devices. Furthermore, because it does not need to be periodically refreshed like DRAM, the 7025S45PFI8 offers superior power efficiency and reduced latency compared to traditional volatile memory.The 7025S45PFI8 offers a number of advantages over other memory technologies. Its low power consumption makes it ideal for mobile and IoT applications. Furthermore, its high reliability allows for data retention for up to 10 years. Additionally, its high read/write speed and low latency allows for fast data access and storage, which is useful for applications requiring a high degree of responsiveness. Finally, its small form factor allows for the integration to a wide range of devices, including mobile and embedded systems.The 7025S45PFI8 offers numerous application fields. It can be used as a program memory in a wide range of embedded systems and mobile devices. Its high data density and high reliability make it ideal for automotive and industrial applications. Additionally, its high speed and small form factor make it suitable for storage in small and medium-sized devices. It can also be used for data storage in networking and communications devices.In terms of its working principle, the 7025S45PFI8 operates in two different modes: write and erase. In write mode, data is stored on the device by applying a voltage to the two transistors using a connected write circuit. These transistors then store the data until they are reset by an erase command. In erase mode, the transistors are reset using a higher voltage, which clears the stored data.Overall, the 7025S45PFI8 non-volatile RAM is an ideal memory solution for a wide range of applications, offering fast performance and improved energy efficiency compared to traditional volatile memory devices. It can be used to store and retrieve data quickly, reliably, and with reduced power consumption for a wide range of devices, from mobile and embedded systems to automotive and industrial applications.

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