70T3539MS133BCI Allicdata Electronics
Allicdata Part #:

800-2300-ND

Manufacturer Part#:

70T3539MS133BCI

Price: $ 148.58
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 18M PARALLEL 256CABGA
More Detail: SRAM - Dual Port, Synchronous Memory IC 18Mb (512K...
DataSheet: 70T3539MS133BCI datasheet70T3539MS133BCI Datasheet/PDF
Quantity: 1000
1 +: $ 135.07200
10 +: $ 133.06900
25 +: $ 130.06700
Stock 1000Can Ship Immediately
$ 148.58
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT70T3539M
Supplier Device Package: 256-CABGA (17x17)
Package / Case: 256-LBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4 V ~ 2.6 V
Memory Interface: Parallel
Access Time: 4.2ns
Series: --
Clock Frequency: 133MHz
Memory Size: 18Mb (512K x 36)
Technology: SRAM - Dual Port, Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tray 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is a core part of any electrically aided device. It serves as the primary means of data storage, providing fast access times and a large memory capacity to a device or system. Memory also makes it possible for systems to learn and adapt over time. The 70T3539MS133BCI is one example of advanced memory technology that has found many applications in modern devices. This article will discuss the application fields and working principle of this memory technology.

Application Fields

The 70T3539MS133BCI is a type of multi-level cell (MLC) NAND flash memory. It has a higher memory density than asynchronous NAND flash, with a top read/write speed of 133 MB/s. It is often used for applications that require a high level of performance and capacity, such as solid-state drives (SSDs) and portable media players. This memory technology is also commonly used in many embedded systems, such as mobile phones and digital cameras.

The 70T3539MS133BCI is also suitable for applications that require a high level of reliability and durability. It can withstand extreme temperatures and shock, making it suitable for use in military and industrial environments. It is also highly resistant to radiation, making it an ideal choice for space-bound applications. Additionally, the 70T3539MS133BCI is designed to achieve a high level of power efficiency, making it suitable for use in battery-powered devices.

Working Principle

The 70T3539MS133BCI memory technology works by storing multiple levels of charge on each memory cell. To read from the memory cell, the exact amount of charge stored in the cell is sensed and then processed by the controller. To write to the memory cell, the amount of charge stored is changed by the controller. This process allows the memory technology to achieve higher densities, faster read/write times, and greater endurance than traditional NAND flash technologies.

The 70T3539MS133BCI also uses enhanced error correction and advanced write algorithms to ensure better data reliability. Additionally, the memory technology features an adaptive refresh algorithm that adapts to the way data is accessed. This helps to reduce power consumption and extend the life of the memory chip.

Overall, the 70T3539MS133BCI is an advanced type of memory technology that has numerous applications in modern devices. It offers a high level of performance, reliability, and durability, making it suitable for a wide variety of embedded and portable systems. It is also designed to achieve maximum power efficiency, making it a great choice for battery-powered applications.

The specific data is subject to PDF, and the above content is for reference

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