70V24L35PFI Allicdata Electronics
Allicdata Part #:

70V24L35PFI-ND

Manufacturer Part#:

70V24L35PFI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 64K PARALLEL 100TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 64Kb (4K ...
DataSheet: 70V24L35PFI datasheet70V24L35PFI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (4K x 16)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Description

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Memory is an important type of computer data storage. It encompasses all the different forms of storage that are used to store data on a computer system. Among these memory products, the 70V24L35PFI (70V24L35PFI) is a type of programmable nonvolatile RAM (NV-RAM) that is widely used in many applications today. In this article, we will take a look at the application field and the working principle of the 70V24L35PFI.

Application Field

The 70V24L35PFI is a type of 8K nonvolatile RAM (NV-RAM). It is widely used in the aerospace, medical, military, industrial, and automotive markets. The 70V24L35PFI can be used to store critical mission parameters, programmable configuration information, and other critical nonvolatile data. The 70V24L35PFI also has on-board self-test and error correction capabilities, making it a highly reliable memory solution.

Working Principle

The 70V24L35PFI utilizes a nonvolatile memory cell which is a combination of a pFET transistor and silicon oxide to store data. When power is applied to the nonvolatile memory cell, the hole concentration in the substrate causes the voltage to drop, thus allowing electrons to flow through the substrate and the connected transistor. This causes the circuit to store the data for an extended period of time without any power. When the power is removed from the nonvolatile memory cell, the voltage level rises and the electrons move to the source of the transistor, thus resetting the cell and erasing the data.

The 70V24L35PFI also provides error-correcting capabilities which help to maintain the integrity of stored data. Moreover, the 70V24L35PFI provides a built-in fail-safe feature which prevents data corruption due to sudden power failures. While conventional RAM requires an external backup power source such as a lithium-ion battery, the 70V24L35PFI does not require one.

The 70V24L35PFI is also programmable, which means that it can be programmed to store different configurations. It can be programmed to store parameters such as boot instruction, byte swappable address, sector size, and data rate. Furthermore, the 70V24L35PFI also supports Read/Write erase sequencing which allows the user to re-program the memory without the need to erase the entire memory first.

Overall, the 70V24L35PFI is an ideal nonvolatile RAM for a wide range of applications. It provides high reliability, programmability, and error-correcting features, making it an ideal solution for applications where data integrity and data security are paramount.

The specific data is subject to PDF, and the above content is for reference

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