70V261S25PFI8

70V261S25PFI8 Memory

The 70V261S25PFI8 memory is a static random access memory (SRAM) with a capacity of 256k words by 8 bits. It is a high speed device with access time as low as 8ns. It runs off a voltage supply of 5 volts and has two bytes of data output. Its low power consumption and high speed access make it an ideal choice for applications where fast access or low power is needed.

The 70V261S25PFI8 memory has a 8 bit organization and can be operated in parallel, enabling multiple devices to be accessed simultaneously. It also has a self-refreshing feature that enables it to keep data in memory as long as power is applied. It also features an asynchronous write enable feature which allows for higher throughput and better performance.

Application Field

The 70V261S25PFI8 memory has a wide range of applications, from automotive to industrial to consumer electronics. It is well suited for applications where real time performance is critical, such as in-car entertainment systems, industrial automation, and other embedded systems. It can also be used in embedded messaging applications with fast access needed. It is also used in medical and aerospace applications where reliability and performance are essential.

The 70V261S25PFI8 memory is also suitable for use in embedded systems or communication networks where fast access is needed, such as in modems, routers and switches. Other applications include video and audio processing, communications, instrumentation and control systems and military applications.

Working Principle

The 70V261S25PFI8 is a static random access memory (SRAM) device. It works by storing data in a series of memory cells and then retrieving that data when requested. These memory cells can store either a 0 or a 1 and are arranged in a grid which contains the address of the data being accessed and the data itself. When the memory is requested, the memory controller will decode the address and activate the appropriate memory cell. The data is then retrieved and placed on the data output lines for use.

The memory can be accessed in parallel, meaning that multiple devices can be accessed simultaneously. This improves the system\'s performance, as multiple memories can be accessed without having to wait for each request to be serviced in order. The device also contains an asynchronous write enable feature which allows data to be written to faster than a read.

In addition to the high speed, low power consumption and asynchronous write enable feature, the 70V261S25PFI8 memory has an extensive testing and quality assurance program which ensures that the device meets its application requirements. This combined with the extensive range of applications it is suitable for, makes it a highly reliable and reliable choice.