70V25L15PFI8 Allicdata Electronics
Allicdata Part #:

70V25L15PFI8-ND

Manufacturer Part#:

70V25L15PFI8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 128K PARALLEL 100TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 128Kb (8K...
DataSheet: 70V25L15PFI8 datasheet70V25L15PFI8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (8K x 16)
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Description

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Memory is an important part of a computer and has many different types. One such type is the 70V25L15PFI8 and this article will discuss its application and working principle.

The 70V25L15PFI8 is a type of Dynamic Random Access Memory (DRAM). It is produced by SDRAM (Synchronous DRAM) and is used primarily for main memory and cache memory. This type of memory is very reliable and fast compared to other types of DRAM. It has a wide range of applications, such as in medical devices, computers, mobile devices, and server systems. It is also used in industrial, automotive, and aerospace applications.

The 70V25L15PFI8 is able to store data in four pages of 256 bytes each. It is composed of a semiconductor memory array, address decoding, and refresh and output control logic. It supports a wide range of access speeds and has a data transfer rate of approximately 1.25 Gbps. This makes it suitable for applications that require a fast data transfer rate.

The working principle of the 70V25L15PFI8 is based on a structure called “cell.” Each cell is composed of two transistors and a capacitor. The transistor is responsible for writing bits in the memory and the capacitor is used to store the bits. The writing process works by sending a signal to the transistor which causes a voltage to be applied and written into the cell. When accessing the data stored in the cell, the contents are read out by the capacitor. This process is the basis of the memory\'s working principle.

The 70V25L15PFI8 is a high-performance memory that is suitable for a wide range of applications. It is reliable, fast and versatile, making it a great option for various applications. It is also cost-effective and has a long life span which makes it a great choice for organizations that require a durable and dependable memory.

In conclusion, the 70V25L15PFI8 is a type of DRAM that is used for main memory and cache memory. It is composed of a semiconductor memory array, address decoding, and refresh and output control logic. The working principle of the 70V25L15PFI8 is based on a structure called “cell” and is composed of two transistors and a capacitor. It is a reliable, fast and versatile memory type that is suitable for a wide range of applications and is cost-effective with a long lifespan.

The specific data is subject to PDF, and the above content is for reference

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