Allicdata Part #: | 70V25S25PFI8-ND |
Manufacturer Part#: |
70V25S25PFI8 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 128K PARALLEL 100TQFP |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 128Kb (8K... |
DataSheet: | 70V25S25PFI8 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 128Kb (8K x 16) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 100-LQFP |
Supplier Device Package: | 100-TQFP (14x14) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
70V25S25PFI8 is a flash memory device with many useful features. It features single power supply, high speed operation and low power consumption, making it ideal for portable devices, automotive and IoT applications. This memory device can be used for both serial and parallel storage applications.
The 70V25S25PFI8 offer two important features that make it different from other flash memory devices: intensive random read/write performance and endurance. The random read/write performance is due to the use of ONFi3.0 technology and utilize the 1-bit ECC, has a sequential read/write speed of up to 187.2 MB/s and a random read/write speed up to 32MB/s. Meanwhile, the endurance of the device is also greater than that of other flash memories due to its 20,000 erase/write cycles.
The 70V25S25PFI8 offers a write and erase function at the sector level. This gives users the flexibility to write to smaller memory units such as bytes and words. In addition, the device supports advanced features such as write protect, block locking and sector unlocking, allowing users to prevent accidental data loss and increase programming flexibility.
The 70V25S25PFI8 also supports advanced error coding and recovery features. This ensures data integrity and consistency. The combination of multiple error control and code correction (ECC) algorithms can ensure data exchanges with very low error rates. These advanced error-recovery technologies are beneficial for use in data-sensitive applications, such as industrial controller and in-vehicle systems.
In summary, the 70V25S25PFI8, a high performance and low power memory device, is suitable for use in a wide variety of applications, from automotive to IoT and industrial control. It has a fast read/write speed, and offers advanced error coding and recovery features, making it a valuable choice for data-sensitive applications. Overall, it offers users the memory capacity and reliability required for their projects.
The specific data is subject to PDF, and the above content is for reference
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