70V3569S4BC Allicdata Electronics
Allicdata Part #:

70V3569S4BC-ND

Manufacturer Part#:

70V3569S4BC

Price: $ 38.56
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 576K PARALLEL 256CABGA
More Detail: SRAM - Dual Port, Synchronous Memory IC 576Kb (16K...
DataSheet: 70V3569S4BC datasheet70V3569S4BC Datasheet/PDF
Quantity: 1000
12 +: $ 35.05270
Stock 1000Can Ship Immediately
$ 38.56
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 576Kb (16K x 36)
Write Cycle Time - Word, Page: --
Access Time: 4.2ns
Memory Interface: Parallel
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)
Base Part Number: IDT70V3569
Description

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Memory is an essential component of digital integrated circuits, microprocessors and controllers. The countless devices that can be found in the modern world, such as computers, smartphones, and robots, have memory to store data, instructions and information for processing.The 70V3569S4BC is a Dynamic Random Access Memory (DRAM), a type of semiconductor memory that stores data in small capacitors placed on a memory cell array. The 70V3569S4BC is designed to be used in high-speed and -power applications where parallel operation is not required.The 70V3569S4BC has several features that make it well suited for certain applications: it is a fast memory with low operating power, has good noise immunity due to its dual-transistor circuit, as well as a low error rate due to its built-in error correction code (ECC). This makes it well suited for mission-critical applications such as industrial controls, medical devices, server applications, and military and aerospace systems.The 70V3569S4BC operates on a number of principles in order to store and write data. Each cell of the array contains two transistors, with one acting as a data line and the other acting as a capacitor. To store data, the line voltage is raised and the capacitor is charged. This is done by either sending a logic \'1\' to the data line (charging the capacitor to the high level) or a \'0\' (charging the capacitor to the low level). To read the data, the line voltage is measured to determine whether the capacitor is charged to the high or low level. This process makes the 70V3569S4BC a fast and reliable dynamic RAM.The 70V3569S4BC is also an efficient memory due to its low-power operation and its built-in ECC system. The ECC is used to detect and correct errors, preventing data corruption and loss. This is especially useful for applications where accuracy is of utmost importance, such as in industrial and medical devices.Overall, the 70V3569S4BC is a fast and efficient dynamic RAM suitable for mission-critical applications. Its capacity, low operating power, good noise immunity and built-in ECC make it an ideal solution for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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