70V3579S4DR Allicdata Electronics
Allicdata Part #:

70V3579S4DR-ND

Manufacturer Part#:

70V3579S4DR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 1.125M PARALLEL 208PQFP
More Detail: SRAM - Dual Port, Synchronous Memory IC 1.125Mb (3...
DataSheet: 70V3579S4DR datasheet70V3579S4DR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 1.125Mb (32K x 36)
Write Cycle Time - Word, Page: --
Access Time: 4.2ns
Memory Interface: Parallel
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-BFQFP
Supplier Device Package: 208-PQFP (28x28)
Base Part Number: IDT70V3579
Description

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This article will discuss the application field and working principles of 70V3579S4DR, which is a type of memory device. 70V3579S4DR is a 256-Mbyte linear RAM memory device from Nanya Technology. Designed with an advanced 0.15µm CMOS process, it combines highly reliable EEPROM, DRAM, and SRAM technologies into one single device for flexibility, scalability, and convenience.

The 70V3579S4DR device provides a high-performance synaptic RAM for storing up to 256 Mbytes of data. It has an operating temperature range from -25°C to +85°C, and an endurance of 1,000,000 Erase/Write cycles. It features a parallel, page mode serial address, and latched Data output. It has an I/O power supply range of 2.7V to 3.6V and a digital interface voltage of 1.65V.

This memory device is widely used in a variety of applications, such as industrial automation, medical, automotive, communications, computer, and consumer products. In addition, 70V3579S4DR can also be used in different types of embedded applications, such as digital signal processing (DSP) and wireless devices. It is also ideal for applications that require low power consumption and high speed performance.

The working principles of 70V3579S4DR are based on the concept of non-volatile memory. The device utilizes CMOS/EEPROM technology to make it non-volatile, meaning it can remember data even after the power is removed. This allows the device to store data reliably over long periods without power. The device also features a page mode operation, which enables it to access the data quickly and efficiently.

In addition, the device also features a self-refresh function which allows it to periodically check and refresh the data stored in its memory cells. This ensures that the data remains valid at all times, and prevents possible data corruption. The device also includes an integrated CRC module to ensure that the data stored in its memory cells is not corrupted due to transmission errors.

The 70V3579S4DR memory device is an ideal choice for a variety of electronics applications. It provides high performance and is suitable for a wide range of applications. Its non-volatile feature ensures reliable storage of data over long periods, and its page mode operation makes it ideal for applications that require fast access times. In addition, its self-refresh function ensures that the data stored in its memory cells remains valid at all times, and its integrated CRC module helps to protect data against possible transmission errors.

The specific data is subject to PDF, and the above content is for reference

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