70V3599S133BCGI Allicdata Electronics
Allicdata Part #:

70V3599S133BCGI-ND

Manufacturer Part#:

70V3599S133BCGI

Price: $ 89.40
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 256CABGA
More Detail: SRAM - Dual Port, Synchronous Memory IC 4.5Mb (128...
DataSheet: 70V3599S133BCGI datasheet70V3599S133BCGI Datasheet/PDF
Quantity: 1000
12 +: $ 81.27560
Stock 1000Can Ship Immediately
$ 89.4
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT70V3599
Supplier Device Package: 256-CABGA (17x17)
Package / Case: 256-LBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.15 V ~ 3.45 V
Memory Interface: Parallel
Access Time: 4.2ns
Series: --
Clock Frequency: 133MHz
Memory Size: 4.5Mb (128K x 36)
Technology: SRAM - Dual Port, Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tray 
Description

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Memory is an indispensable component of computer systems, and it is also an important part of computer structure. In many cases, memory is used to store data, including programs, files and other information. The 70V3599S133BCGI is a type of memory component developed by Samsung. Its application field and working principle will be discussed in this essay.

Application Fields

The 70V3599S133BCGI is a dynamic random access memory (DRAM) component for use in computers, and it is designed for high-performance applications such as gaming, graphics workstations, CAD/CAM and enterprise-level servers. It is suitable for any system where faster access times, larger capacity and greater reliability are desired.

It can be used as either main memory or as a cache, and is available in both single- and double-sided configurations. Because of its advanced features, it is ideal for applications requiring high speeds and large capacities, such as gaming and enterprise-level servers. It is also suitable for use in low-power devices, such as netbooks, since it requires less energy to operate than other DRAMs.

Working Principle

The principles of DRAMs are based on the concept of capacitive cells. A capacitor is a small electronic device that stores electric charge; it is made up of two conducting plates separated by an insulating layer. When a voltage is applied to the plates, electrons collect on one plate and holes collect on the other plate, creating an electric charge.

The 70V3599S133BCGI memory uses this concept to store data. Each capacitor consists of a small amount of charge, which represents a single bit of data. When a voltage is applied to the capacitor, electrons transfer from one plate to the other, creating a charge. This charge can either be a 0 or a 1, depending on whether the capacitor is charged or not.

The 70V3599S133BCGI memory is capable of storing multiple bits of data in a single capacitor. This is accomplished by using multiple layers of capacitors, each layer storing a single bit. By arranging the capacitors in this way, the memory is able to store more data in a smaller space, resulting in higher performance and greater efficiency.

Conclusion

The 70V3599S133BCGI is a type of memory component developed by Samsung. It is designed for high-performance applications such as gaming, graphics workstations, CAD/CAM and enterprise-level servers. It is suitable for any system where faster access times, larger capacity and greater reliability are desired. Its working principle is based on the concept of capacitive cells, which are used to store data in the form of electric charges.

In conclusion, the 70V3599S133BCGI is a reliable and efficient memory component that is suitable for use in a variety of applications. It is capable of storing large amounts of data in a small amount of space and can be used as either main memory or as a cache. Its advanced features make it ideal for applications requiring high speeds and large capacities.

The specific data is subject to PDF, and the above content is for reference

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