70V3579S4BF Allicdata Electronics
Allicdata Part #:

70V3579S4BF-ND

Manufacturer Part#:

70V3579S4BF

Price: $ 50.12
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 1.125M PARALLEL 208CABGA
More Detail: SRAM - Dual Port, Synchronous Memory IC 1.125Mb (3...
DataSheet: 70V3579S4BF datasheet70V3579S4BF Datasheet/PDF
Quantity: 1000
14 +: $ 45.56880
Stock 1000Can Ship Immediately
$ 50.12
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 1.125Mb (32K x 36)
Write Cycle Time - Word, Page: --
Access Time: 4.2ns
Memory Interface: Parallel
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-LFBGA
Supplier Device Package: 208-CABGA (15x15)
Base Part Number: IDT70V3579
Description

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The 70V3579S4BF is a type of memory module that is used in all types of computing devices. It is one of the most reliable and efficient ways to store data. This article will address the various applications of 70V3579S4BF memory, as well as explain its working principle.

Applications of 70V3579S4BF Memory

70V3579S4BF memory is used in a variety of applications, ranging from low-end consumer electronics to high-end industrial and military computing. The most common application for 70V3579S4BF memory is in personal computers, servers, and other embedded systems. It is also used in everyday consumer products such as MP3 players, digital cameras, mobile phones, and game consoles. Furthermore, this type of memory is also used in mission-critical applications such as aerospace, industrial automation, medical equipment, and transportation.

In terms of computing power, 70V3579S4BF memory is able to provide the highest level of performance on the market. It is fast, reliable, and energy-efficient. This makes it ideal for mission-critical applications where speed and reliability are essential.

Additionally, 70V3579S4BF memory is adapted for use in many types of unconventional computing environments. It can be used in harsh or extreme environments, as well as in temperatures ranging from -25°C to 85°C. This makes 70V3579S4BF a highly versatile type of memory that can be used in a wide range of applications.

Working Principle of 70V3579S4BF

70V3579S4BF memory is based on the principle of dynamic random access memory (DRAM). This means that the module uses a grid of cells (referred to as capacitors) that can be written to and read from in order to store and retrieve data. The module works by passing an electric current through the capacitor cells, activating them and allowing them to store or retrieve data.

When the module receives a write command, the capacitors are charged or discharged so that they store a 1 or 0. The module then reads the voltage stored in the cell to determine whether the data is a 1 or 0. When the module receives a read command, the cell’s voltage is read and the data is retrieved.

This process of storing data in the cell’s capacitors and then retrieving it is the basis of DRAM technology. 70V3579S4BF memory is just one type of memory that utilizes this technology, with its own specific capabilities that make it suitable for certain applications.

In terms of additional features, 70V3579S4BF memory is designed with a type of error-correcting code (ECC) that is able to detect and correct any single-bit or multi-bit errors in the data stored by the module. This provides an additional layer of protection for mission-critical operations that rely on the utmost accuracy and reliability of the data stored.

Conclusion

The 70V3579S4BF memory module has many applications and is one of the most reliable and efficient types of memory in the market. It is well-suited for mission-critical applications due to its high performance and advanced error-correcting features. Finally, the module is designed to operate in a wide range of temperatures and environments, making it a versatile and reliable choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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