70V3579S5BF Allicdata Electronics
Allicdata Part #:

70V3579S5BF-ND

Manufacturer Part#:

70V3579S5BF

Price: $ 47.73
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 1.125M PARALLEL 208CABGA
More Detail: SRAM - Dual Port, Synchronous Memory IC 1.125Mb (3...
DataSheet: 70V3579S5BF datasheet70V3579S5BF Datasheet/PDF
Quantity: 1000
14 +: $ 43.38540
Stock 1000Can Ship Immediately
$ 47.73
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 1.125Mb (32K x 36)
Write Cycle Time - Word, Page: --
Access Time: 5ns
Memory Interface: Parallel
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-LFBGA
Supplier Device Package: 208-CABGA (15x15)
Base Part Number: IDT70V3579
Description

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A 70V3579S5BF is a type of advanced memory device. It is one of the few that has the advantage of offering integrated error correction code, meaning that part of the memory may be devoted to correcting errors on its own. This allows for more reliable and accurate memory retention than other varieties.

The 70V3579S5BF has a relatively large storage capacity, allowing it to store a wide variety of data. It is commonly used in applications such as memory-intensive mobile devices, since it has a high compatibility with both older and newer mobile devices. This makes it an ideal choice for applications that require both advanced error correction and a large memory capacity.

Application Field & Working principle

The 70V3579S5BF is a type of memory technology which finds application in many fields including mobile phone application and automotive electronics. This type of memory comes with a built-in Error Correction Code (ECC) which helps identify and correct memory errors. This makes the 70V3579S5BF widely used in various applications requiring error-free operation.

The working principle of the 70V3579S5BF memory is quite simple. It uses an algorithm to generate a random number for each memory location. This random number is used to determine the data stored in the memory. When the data is read, the random number is generated again and compared to the stored number. If the numbers match, the data is unchanged, otherwise, an error has occurred and the data should be corrected.

The 70V3579S5BF can store up to 8 GB of data per device, while its data bus is two or four bytes wide. This allows it to provide fast read and write access speeds, making it ideal for use in memory-intensive applications.

In addition to its capacity and data bus width, the 70V3579S5BF also features a low power consumption, making it an excellent choice for applications where long battery life is essential. This makes it especially ideal for applications such as mobile phones, where high capacity and power efficiency are of paramount importance.

The 70V3579S5BF memory is a reliable, robust and power efficient memory technology. It is suitable for a wide range of applications, from mobile phones and automotive electronics, to scientific and medical equipment.

The specific data is subject to PDF, and the above content is for reference

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