70V658S10BC8 Allicdata Electronics
Allicdata Part #:

70V658S10BC8-ND

Manufacturer Part#:

70V658S10BC8

Price: $ 54.21
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 2M PARALLEL 256CABGA
More Detail: SRAM - Dual Port, Asynchronous Memory IC 2Mb (64K ...
DataSheet: 70V658S10BC8 datasheet70V658S10BC8 Datasheet/PDF
Quantity: 1000
1000 +: $ 49.27910
Stock 1000Can Ship Immediately
$ 54.21
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 2Mb (64K x 36)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)
Base Part Number: IDT70V658
Description

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The 70V658S10BC8 is a type of memory that has a wide range of applications. This type of memory is designed to be fast and efficient, and it can be used in many different types of systems. In this article, we will discuss the application field and working principle of the 70V658S10BC8.

Application Field

The 70V658S10BC8 memory is used in many different types of systems. It is commonly used in industrial automation systems, military systems, medical systems, telecommunications systems, and many more. The type of system that uses the 70V658S10BC8 memory depends on its application requirements. For example, industrial automation systems require high speed, reliability, and stability; medical systems require high safety level and accuracy; and telecommunications systems require low power consumption and high authentication security.

Working Principle

The 70V658S10BC8 memory utilizes a Non-Volatile Memory (NVM) chip which is capable of storing data even when the power is turned off. The NVM chip is composed of transistors, which are arranged in an array to store data. Data is written to the NVM chip using a charge pump circuit that generates a very high voltage. This voltage is used to activate the transistors, which in turn stores the data. When the data is accessed, the charge pump generates a lower voltage, causing the transistors to return to their initial states, thus reading the data.

The 70V658S10BC8 memory also utilizes Error Correcting Code (ECC) to ensure data accuracy and reliability. The ECC is able to detect errors in the data and automatically correct them. This ensures that the system remains reliable and secure, even in the case of data read errors.

The 70V658S10BC8 memory is also designed to be energy-efficient. It uses a Low-Power Standby Mode (LPSM) feature to conserve energy. This feature allows the memory to enter a low-power state when it is not in use, which helps reduce power consumption and increase system efficiency.

Overall, the 70V658S10BC8 memory is a highly reliable and efficient type of memory that is ideal for use in a variety of systems. It has a wide range of applications and its features ensure that data is securely stored and read with accuracy and reliability.

The specific data is subject to PDF, and the above content is for reference

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